Understanding and developing metrics on how nanocrystals respond to local external surface stimuli at their interfaces during growth or operation is a key step in advancing scalable and deterministic approaches for fabricating functional one- and two-dimensional (1D and 2D) nanoscale networks. Here, we present early results on a general approach for surface-directed nanocrystal epitaxy on a sur...

Gallium Nitride (GaN) is a unique material system that has been heavily exploited for photonic devices thanks to ultraviolet-to-terahertz spectral tunability. However, without a cost effective approach, GaN technology is limited to laboratory demonstrations and niche applications. In this investigation, integration of GaN on Silicon (100) substrates is attempted to enable widespread application...

Stacking two-dimensional (2D) materials into multi-layers or heterostructures, known as van der Waals (vdW) epitaxy, is an essential degree of freedom for tuning their properties on demand. Few-layer black phosphorus (FLBP), a material with high potential for nano- and optoelectronics applications, appears to have interlayer couplings much stronger than graphene and other 2D systems. Indeed, th...

Raising the thermoelectric voltage in spin generators is an important subject. We investigated substitution of bismuth for yttrium to increase pumping at paramagnetic metal and ferrimagnetic insulator (PM/FMI) interface, tested bismuth-substituted iron garnet films grown by liquid phase epitaxy. Epitaxial Bi-substituted exhibit large growth-induced magnetic anisotropy perpendicular film surface...

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The di...

Nanoscale phase separation in Fe304(l 11) films on sapphire(0001) and phase stability of Fe304(001) films on MgO(001) grown by oxygen-plasma-assisted molecular beam epitaxy We report a phase instability in oxygen-plasma-assisted molecular beam epitaxy of Fe304 films on sapphire (0001) substrates. Under a wide range of growth conditions, Fe304 (111) films phase separate, on a nanometer length sc...

We consider the stability of a single step during epitaxial growth of a monolayer on a continuously supplied substrate in the presence of an imposed gradient in the deposition rate along the direction of growth. This allows control of instabilities that arise from asymmetries in the supply of atoms attaching from the upper and lower side of the step. We consider both a linear stability analysis...

a r t i c l e i n f o Keywords: Epitaxy Electron backscatter diffraction Fe 2 O 3 Pulsed laser deposition Eutaxy Combinatorial substrate epitaxy Perovskite SrTiO 3 The grain-by-grain orientation relationships between an Fe 2 O 3 film, grown using pulsed laser deposition, and a polycrystalline SrTiO 3 substrate were determined using electron backscatter diffraction. This high-throughput investig...

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...