In this paper, we solve numerically a semiconductor device energy balance equation using monotone iterative method. With the proposed solution technique, we prove the solution of ̄nite volume discretized semiconductor device energy balance equation converges monotonically. The method presented here provides an e± cient approach for the numerical solution of energy balance equation in submicron ...

Shape memory alloys (SMAs) are a class of smart materials characterized by shape memory effect and pseudo-elastic behavior. They have the capability to retain their original form when subjected to certain stimuli, such as heat or a magnetic field. These unique properties have attracted many researchers to seek their application in various fields including transportation, aerospace, and biomedic...

This work investigates the effect of doping concentration SiC power metal-oxide–semiconductor field-effect transistors (MOSFETs) under an unclamped inductive switching (UIS) condition. Switching circuits such as inverters and motor-drive often face unexpected operating conditions; therefore, a UIS test is performed to assess avalanche ruggedness device, design parameters should be considered im...

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

Semiconductor Slow-Light Device

A series of new tetrathiafulvalene (TTF) derivatives bearing dimethoxycarbonyl and phenyl or phthalimidyl groups fused to the TTF core (6 and 15-18) has been synthesized as potential soluble semiconductor materials for organic field-effect transistors (OFETs). The electron-withdrawing substituents lower the energy of the HOMO and LUMO levels and increase the solubility and stability of the semi...

We demonstrate that the conductance of a field-effect transistor ~FET! gated by a layer of nanometer-sized quantum dots is sensitive to the absorption of single photons. Rather than relying upon an avalanche process, as in conventional semiconductor single-photon detectors, the gain in this device derives from the fact that the conductivity of the FET channel is very sensitive to the photoexcit...

We describe an approach to substituting a fluorescence microarray with a surface made of an arrangement of electrolyte-gated field effect transistors. This was achieved using a dedicated blocking of non-specific interactions and comparing threshold voltage shifts of transistors exhibiting probe molecules of different base sequence. We apply the approach to detection of the 35delG mutation, whic...

The noise characteristics of today’s short-channel devices are shown to have a better resemblance to ballistic devices than to long-channel metal oxide semiconductor field effect transistors MOSFETs . Therefore the noise characteristics of these devices are best modeled using a ballistic-MOSFET-based noise model. Extensive hydrodynamic device simulations are presented in support of this hypothe...