This paper presents neural-based large-signal and isothermal models for the dual gate MESFET as efficient alternatives to existing nonlinear models for such a complex device. The developed neural model is a combination of two sub-models; a static model represented by DC current-voltage characteristics and a dynamic model represented by pulsed current-voltage characteristics. The isothermal mode...

In this paper designed, implemented and simulated LNA is divided into two parts. In the first part, LNA is based on lumped elements and in second part LNA is based on distributed elements. Two designed methods have been compared and best performance is obtained with lumped elements. The designed amplifier provides a noise figure of 0.358 dB , gain of 16.778 dB, input return loss is -4.917dB and...

Temperature dependence of the GaN-Dual-Gate MESFET (GaNDGMESFET) DC-characteristics is investigated using two dimensional numerical simulations. Differential equations derived from a Hydrodynamic electron transport model describe the physical proprieties of the device. Simulation results over a wide range of temperature from 300 K to 900 K performed on an industrial software Atlas from SILVACO ...

We develop and demonstrate the capability of a high order accurate finite difference weighted essentially non-oscillatory (WENO) solver for the direct numerical simulation of transients for a two space dimensional Boltzmann transport equation (BTE) coupled with the Poisson equation modeling semiconductor devices such as the MESFET and MOSFET. We compare the simulation results with those obtaine...

In this letter, fin-shape tri-gate $\beta $ -Ga2O3 lateral MESFETs are demonstrated with a high power figure of merit (PFOM) 0.95 GW/cm2 – record for any transistor to date. A low-temperature un-doped buffer-channel stack design is de...

We report on a GaN metal-oxide-semiconductor field-effect-transistor (MOSFET) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a GaN metal-semiconductor field-effect-transistor (MESFET) of similar design, the MOSFET exhibits several orders of magnitude lower gate leakage and near three times higher channel current. This implies that the ALD Al2O3/GaN interface is of ...

In this paper we present a modular neural network structure for global modeling of microwave transistors (MESFET/HEMT). The model is able to accurately represent both, the small-signal and the large-signal behavior of the device. This is achieved by means of an original neural architecture, which is composed of two main modules. The first module captures the nonlinear dynamic I/V characteristic...

-Two-dimensional analytical model for optically biased non-self-aligned and self-aligned short channel GaAs MESFETs is developed to show the photo effects on the Id–Vd characteristics. When light radiation having photon energy equal to or greater than the band gap energy of GaAs is allowed to fall, the drain current increases significantly as compared to dark condition due to photoconductive ef...