نتایج جستجو برای: micron technologies

تعداد نتایج: 218785  

Journal: :Arquivos brasileiros de cardiologia 1999
R Xavier-Vidal K Madi

PURPOSE To develop a stereological comparison between right (RV) and left ventricle (LV) myocardium during the third human gestational trimester. METHODS Five human fetal hearts of the third trimester provided representative samples of 5 RV myocardium and 4 LV myocardium. The material was fixed in 10% buffered formaldehyde, and processed through routine methods. Fifteen microscopic fields wer...

Journal: :The Journal of parasitology 1985
T L Vance D W Duszynski

Beginning in July 1980, 149 voles (Microtus spp.) representing 9 species and 14 subspecies collected in Japan, Mexico and the United States were examined for coccidia; 67 (45%) had oocysts in their feces. These included 1 of 3 (33%) M. californicus sactidiegi; 0 of 1 M. longicaudus longicaudus; 0 of 1 M. l. macrurus; 48 of 111 (43%) M. mexicanus including 11 of 26 (42%) M. m. fulviventer, 1 of ...

2002
Dinesh Pamunuwa Li-Rong Zheng Hannu Tenhunen

In deep sub-micron (DSM) circuits proper analysis of interconnect delay is very important. When relatively long wires are placed in parallel, it is essential to include the effects of cross-talk on delay. In a parallel wire structure, the exact spacing and size of the wires determine both the resistance and the distribution of the capacitance between the ground plane and the adjacent signal car...

2011
Minchang Liang

As device technologies improve, the traditional driftdiffusion transport model becomes inadequate to predict the performance of state-of-the-art semiconductor devices. The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena. For more accurate prediction on device performance, a new device...

2008
G. Travish J. B. Rosenzweig Jin Xu R. B. Yoder S. Boucher Marina del Rey

A dielectric, slab-symmetric structure for generating and accelerating low-energy electrons has been under study for the past two years. The resonant device is driven by a side-coupled laser and is configured to maintain field profiles necessary for synchronous acceleration and focusing of nonrelativistic particles. Intended applications of the structure include the production of radiation for ...

2015
Glen R. Kirkham Emily Britchford Thomas Upton James Ware Graham M. Gibson Yannick Devaud Martin Ehrbar Miles Padgett Stephanie Allen Lee D. Buttery Kevin Shakesheff

The accurate study of cellular microenvironments is limited by the lack of technologies that can manipulate cells in 3D at a sufficiently small length scale. The ability to build and manipulate multicellular microscopic structures will facilitate a more detailed understanding of cellular function in fields such as developmental and stem cell biology. We present a holographic optical tweezers ba...

2008
M. P. LEPSELTER A. T. FIORY N. M. RAVINDRA

Since the introduction of SiO2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is time for a new property to be exploited in con...

2016
Yogesh Kumar Sandeep Kaur Kingra

SRAM is the most crucial part of memory designs and are imperative in many simple or compound applications that implicate system on chip (SoCs). Power dissipation and stability has now become the most essential area of concern in sub-micron SRAM cell design with continuous technology scaling according to Moore’s law. At latest, retrenchment of channel length MOSFET is directly proportional to t...

2014
A. Read

Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characteriz...

1986
M. Sonza Reorda M. Violante

The effects of charged particles striking VLSI circuits and producing single event transients (SETs) are becoming an issue for designers who exploit deep sub-micron technologies; efficient and accurate techniques for assessing their impact on VLSI designs are thus needed. This paper presents a new approach for generating the list of faults to be addressed during fault injection experiments tack...

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