The presence of van der Waals (vdW) force can lead to mechanical instability in freestanding nano-scale actuators. Most of the previous researches in this area have exclusively focused on modeling the instability in actuators with one actuating components. While, less attention has been paid to actuators consist of two actuating components. Herein, the effect of the vdW force on the instability...

One of the great problems in current large-scale integrated circuits is increasing power dissipation in a small silicon chip. Single-electron transistors which operate by means of oneby-one electron transfer, is relatively small and consume very low power and suitable for achieving higher levels of integration. In this research, the four masks step are involved namely source and drain mask, Pol...

We present a time-saving simulator within the framework of the density functional theory to calculate the transport properties of electrons through nanostructures suspended between semi-infinite electrodes. By introducing the Fourier transform and preconditioning conjugate-gradient algorithms into the simulator, a highly efficient performance can be achieved in determining scattering wave funct...

Quantum-effects will play an important role in both future CMOS and 'beyond CMOS' technologies. By comparing single-electron transistors formed in un-patterned, uniform-width silicon nanowire (SiNW) devices with core widths from ∼5-40 nm, and gated lengths of 1 μm and ∼50 nm, we show conditions under which these effects become significant. Coulomb blockade drain-source current-voltage character...

Helical multishell gold nanowire is studied theoretically for the formation mechanism of helical domain boundary. Nanowires with the wire length of more than 10 nm are relaxed by quantum mechanical molecular dynamics simulation with tight-binding form Hamiltonian. In results, non-helical nanowires are transformed into helical ones with the formation of atom pair defects at domain boundary, wher...