High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are gener...

Quantitative results from infrared laser absorption spectroscopy ~IRLAS! of CF and CF2 radicals and COF2 products in inductively coupled plasmas fed with C2F6, CHF3 and C4F8 are presented and compared with results simultaneously obtained by mass spectrometry and optical emission spectroscopy. These plasma gas-phase analysis results are discussed and compared to fluorocarbon deposition and etchi...

We devised a controlled hydrogen plasma reaction at 300 °C to etch graphene and graphene nanoribbons (GNRs) selectively at the edges over the basal plane. Atomic force microscope imaging showed that the etching rates for single-layer and few-layer (≥2 layers) graphene are 0.27 ± 0.05 nm/min and 0.10 ± 0.03 nm/min, respectively. Meanwhile, Raman spectroscopic mapping revealed no D band in the pl...

The etching of silicon by a chlorine inductively coupled plasma ~ICP! was studied using laser desorption laser-induced fluorescence ~LD-LIF! analysis to determine the surface coverage of chlorine during steady-state etching. Laser interferometry was used to measure etch rates, and optical emission actinometry and Langmuir probe analysis were used to characterize the plasma. The ICP operated in ...