The effect of post-ion implantation annealing on the properties SiO 2 /4H-SiC interface is examined in this paper. It observed that surface roughness degrades after high-temperature Ar annealing, but oxidation process high temperature can improve roughness. To better understand gate oxide, reliability oxide further studied. results show although state density, tunneling barrier height, breakdow...

ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...

The development of cost-effective and low-temperature synthesis techniques for the growth of highquality zinc oxide thin films is paramount for fabrication of ZnO-based optoelectronic devices, especially ultraviolet (UV)-light-emitting diodes, lasers and detectors. We demonstrate that the properties, especially UV emission, observed at room temperature, of electrodeposited ZnO thin films from c...

The effect of low growth rate deposition (LGD) BaSi2 on the film quality and performance silicon heterojunction solar cells was investigated. total thickness layer decreased with increasing LGD duration (tLGD). Analysis using Raman spectroscopy indicated that an amorphous Si (a-Si) phase existed surface layer. a-Si converted into by post-annealing owing to diffusion Ba atoms. X-ray diffraction ...

Indium sulfide (In2S3) is an n-type semiconductor with wide bandgap energy (2.2–2.7 eV) and currently used as buffer/window layer in thin film solar cells alternative to toxic CdS. In the present study, In2S3 films were deposited on soda lime glass substrates using thermal evaporation technique at different substrate temperatures, Ts = 200 °C–350 °C. Further, all as-deposited annealed sulfur am...