Plasma atomic layer etching is a dry process using dose step to modify material’s surface chemistry and an etch remove the modified layer. This method of has certain advantages over reactive ion due its self-limiting for highly controllable depth reduced roughness. In this paper, we expand upon anisotropic, plasma recipe used thin films silicon nitride, which uses H2 material SF6 surface. Sever...

Metasurfaces are ultrathin and flat layers of subwavelength nanostructures composed metallic or high‐refractive‐index materials. They can alter lightwave properties effectively show significant application potential in various nanophotonic technologies. The meta‐atoms generally carved by electron beam lithography focused ion beam. It is challenging to produce large‐scale metasurface devices at ...

Amorphous fluoropolymer films have low dielectric constants and high chemical resistance and, so, have potential to be used as the insulator for high speed interconnects and as protection layers. Many applications would require high resolution patterning of the fluoropolymer film. We have found that these films are easily etched by reactive ion beam etching using an O2/Ar gas mixture. High etch...

Deep reactive ion etching (DRIE) of borosilicate glass and profile control of an etched groove are reported. DRIE was carried out using an anodically bonded silicon wafer as an etching mask. We controlled the groove profile, namely improving its sidewall angle, by removing excessively thick polymer film produced by carbonfluoride etching gases during DRIE. Two fabrication processes were experim...

In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts a...