The mechanisms responsible for neutron-induced single-event burnout (SEB) in commercial silicon carbide power MOSFETs under atmospheric-like neutron spectrum were investigated and analyzed. combined effect of applied reverse gate voltage drain was evaluated. First, local analysis the packaged device at wafer level is performed to reveal failure mechanism inside semiconductor lattice. Second, ba...

The development and widespread of high-tech microelectronic products impose increased requirements on the quality reliability microcircuits. most effective methods for improvement electronic systems include diagnostic non-destructive testing (NDT) selective destructive in special cases. Studies using visual inspection electrical testing, consisting functional parametric do not provide enough in...

The curtain has been raised on new century. Prior to discussing the present status and trends of power semiconductor devices, allow us to briefly review Fuji Electric’s history with power devices. The semiconductor device was invented and developed in the latter half of the 20th century. When Shockley, Brattain, and Bardeen invented a transistor in 1948, they did not think that this transistor ...

A new parallel semiconductor device simulation using the dynamic load balancing approach is presented. This semiconductor device simulation based on adaptive finite volume, error estimation, and monotone iterative methods has been developed and implemented on a Linux-cluster with MPI library. Two different parallel versions of the algorithm to perform a complete device simulation are proposed. ...

To be successful in the competitive nano-semiconductor industry, the need to reduce cost per die is necessary and always challenging. Such defect data consist of systematic and random defects that may be yield limiting or may be just cosmetic issue with low probability of yield impact. Nano semiconductor process manufacturing defects can often impact product yields, depending upon the type, siz...

We have made Na (+) and He (+) ions incident on the surface of solid state tunnel junctions and measured the energy loss due to atomic displacement and electronic excitations. Each tunnel junction consists of an ultrathin film metal-oxide-semiconductor device which can be biased to create a band of hot electrons useful for driving chemical reactions at surfaces. Using the binary collision appro...

Germanium (Ge), as an elemental semiconductor material, has been an attractive candidate for manufacturing semiconductor microelectronic device. In the present investigation, to improve the biocompatibility of Ge-based device, graphene film is directly deposited on the Ge surface with different coverage area by controlling the growth time. Compared to bare Ge, the presence of graphene film enti...

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This paper presents the design, synthesis, optical and electrochemical characterization, crystal packing, modeling and thin film morphology, and organic thin film field effect transistor (OTFT) device data analysis for a novel 2,...

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contra...

Semiconductor nanowires are possible candidates to replace the metal-oxide-semiconductor field-effect transistors (MOSFET) since they can act both as active devices or as device connectors. In this article, the transmission coefficients of Si and GaAs nanowires with arbitrary transport directions and cross sections are simulated in the nearestneighbor sp3d5s∗ semi-empirical tight-binding method...