Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can ...

Nano cavities based on silicon and indium phosphide materials have been comparedin this study, considering field intensity enhancement factor. The results of FDTD based simulations declare that the Si nano-cavity improves confined optical field about 7.7 times higher than the InP based nano-cavity. The introduced dielectric nano-cavities support resonance wavelength at about λ=1.55 μm.

A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF ...

The formation of Ge self-organized quantum dots (huts) on the Si(001)-2x1 surface has attracted much attention due to its status as the premier model system for investigating straininduced semiconductor nanostructure growth. Our findings on this strained surface structure imply that both the structure and the strain of semiconductor nanostructures may be controlled through the understanding of ...

We present results of fully two-dimensional numerical simulations of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) in comparison with experimental data. Among the critical modeling issues discussed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown in Si. # 2003 Elsevier B.V. All rights...

Silica exists in Rice husk, an agriculture waste, as a naturally occurring phase. In first step, acidic pre-treatment and calcination of the rice husk were performed to obtain nano-silica, in which various sizes of the nano-silica, totally with sizes under 80 nm, were achieved. Second, to reduce nano-silica to elemental Si and subsequently formation of the composite, Mg used as the reducing age...

Lasers on Si are crucial components of monolithic electronic-photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to achieve efficient light emission and optical gain from its direct gap transition. We report on w...

High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of th...

Quantum squeezing can improve the ultimate measurement precision by squeezing one desired fluctuation of the two physical quantities in Heisenberg relation. We propose a scheme to obtain squeezed states through graphene nanoelectromechanical system (NEMS) taking advantage of their thin thickness in principle. Two key criteria of achieving squeezing states, zero-point displacement uncertainty an...

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation ...