let g and h be two graphs. the corona product g o h is obtained by taking one copy of gand |v(g)| copies of h; and by joining each vertex of the i-th copy of h to the i-th vertex of g,i = 1, 2, …, |v(g)|. in this paper, we compute pi and hyper–wiener indices of the coronaproduct of graphs.

As research begins to explore potential nanotechnologies for future post-CMOS integrated systems, modeling and simulation environments must be developed that can accommodate the corresponding problem complexity and nontraditional device characteristics. This paper describes a circuitlevel simulator that can accommodate an important class of nanotechnology devices that are characterized by nonmo...

In this paper, we focus on current–voltage (I–V) characteristics in several kinds of quasi-one-dimensional (quasi-1D) nanofibers to investigate their electronic transport properties covering a wide temperature range from 300 down to 2 K. Since the complex structures composed of ordered conductive regions in series with disordered barriers in conducting polymer nanotubes/wires and CdS nanowires,...

When measuring I-V characteristics and carrier lifetimes in quasi-steady-state QSS conditions, it is important to consider the time dependence of the charge due to excess carriers within the device. This paper shows that the space-charge region present in pn-junction devices and in many lifetime test structures can produce a significant capacitive effect when measuring the low voltage and low c...

Solar photovoltaic technology is a major contender in the race for renewable, sustainable and green energy. This paper introduces the characteristics of different PV cell equivalent circuit and its output behaviour. It describes and implements the proposed characterization method by using a selected model. It generates I-V and P-V curve using iterative method. Noise analysis and observation of ...

The change in the atomic nitrogen concentration on a semiconducting nanowire's surface and the consequent changes in the electrical characteristics of a nanowire transistor were investigated by exposing In(2)O(3) nanowires to nitrogen (N(2)) plasma. After plasma was applied at N(2) flow rates of 20, 40, and 70 sccm with a fixed source power of 50 W, the In(2)O(3) nanowire transistor exhibited c...

The forward and reverse bias I–V, C–V, and G/x–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al0.22Ga0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiNx insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiNx) on the main electrical parameters such as the ideality factor (n), zero-bias barr...

In this paper studies on Si/ZnO heterojunction diode is presented. In this work Zinc oxide (ZnO) was conformally deposited on Silicon (Si) Wafer by atomic layer deposition (ALD) technique without using a buffer layer. For low-temperature ALD deposition, diethyl zinc (DEZn) and deionized (DI) water were used as the sources for zinc and oxygen respectively. Surface characterization and optical ch...

Nonequilibrium states driven by both electric bias voltages $V$ and temperature differences $\mathrm{\ensuremath{\Delta}}T$ (or thermal $e{V}_{T}\ensuremath{\equiv}{k}_{B}\mathrm{\ensuremath{\Delta}}T$) are unique probes of various systems. Whereas average currents $I(V,{V}_{T})$ traditionally measured in majority experiments, an essential part nonequilibrium dynamics, stored particularly fluct...