نتایج جستجو برای: micron technologies

تعداد نتایج: 218785  

Journal: :The Yale Journal of Biology and Medicine 1984
K. Hovind-Hougen

Two strains of Ixodes spirochetes, one isolated in the United States (B31) and the other in Sweden (G25), were examined by electron microscopy. Cells of strain G25 were 11-25 micron long with a wavelength of 2.1-2.4 micron and an amplitude of 0.4 micron. Eleven flagella were inserted subterminally at each end of the cell. Cells of strain B31 were similar but had eleven or seven flagella. Cytopl...

Journal: :Proceedings of the National Academy of Sciences of the United States of America 1978
J T Hjelle J Baird-Lambert G Cardinale S Specor S Udenfriend

Isolated bovine retinal and brain microvessels, exhibiting a patent lumen, were used to study the contribution of the microvasculature to the blood-brain and blood-retina barriers. The diffusion marker, sucrose, was taken up slowly by the isolated microvessels in contrast to leucine, tyrosine, and valine which were taken up at a considerably faster rate. Uptake of leucine was temperature depend...

2003
J. Douglas

A new class of fires suppressants, known as Encapsulated Micron Aerosol Agents (EMAA), having superior volumetric efficiency, low initial and life cycle costs, low toxicity, no known global atmospheric environmental impacts (ODP/GWP), and with the potential for a wide variety of applications, is being developed via a joint program between the private sector and the U.S. Air Force. The research ...

2012
Manisha Pattanaik

In this paper, we present the temperature based simulation and analysis of gate leakage current for the proposed low-stress IP3 SRAM bit cell. In CMOS technologies, cache memory occupies a large die area and this may experience different temperatures. Under temperature variations, performance of the system may degrade. Therefore, in the IP3 SRAM cell, gate leakage has been analyzed under temper...

2007
M. Watanabe D. Fukushi H. Yano S. Nakajima

We have successfully fabricated 0.1 μm gate GaAs MESFETs using a low cost process. The result was obtained from optical lithography, resist etching, and ion-implantation technologies based on Single Resist layer Dummy gate (SRD) process. The novel feature of the SRD process is forming a sub-quarter micron gate with conventional optical lithography. We have obtained a 0.18 μm gate using this pro...

2007
Ivan B. Divliansky Eric G. Johnson

The broad development of the microand nano-technologies in the past few years increased the need of techniques capable of fabricating sub-micron structures with arbitrary surface profiles. Out of the several fabrication approaches (HEBS lithography, laser writing, etc.) the electron beam writing stands out as the one capable of the highest resolution, superior alignment accuracy and very small ...

2005
Roger Haynes Andrew McGrath

Starbug is a robotic positioning development concept for deploying many payloads, such as pickoff optics, optical fibres, integral field units, to micron level accuracy over a flat or curved focal surface. With a heritage of fibre positioners such as 2dF, OzPoz and FMOS-Echidna, this concept addresses some of the limitations of other positioning systems to provide a reliable, cost effective way...

1998
Pradeep Prabhakaran Prithviraj Banerjee

With small device features in sub-micron technologies, interconnection delays play a dominant part in cycle time. Hence, it is important to consider the impact of physical design during high level synthesis. In comparison to a traditional approach which separates high-level synthesis from physical design, an algorithm which is able to make these stages interact very closely, would result in sol...

2001
Doris Keitel-Schulz Norbert Wehn Francky Catthoor Preeti Ranjan Panda

First, background will be provided on embedded DRAM process, circuit and market issues. The term system-on-silicon has been used to denote the integration of random logic, processor cores, SRAMs, ROMs, and analog components on the same die. But up to recently, one major component had been missing: high-density DRAMs. Today's technologies allow the integration of significant amounts of DRAM memo...

Journal: :Computers & Mathematics with Applications 2019

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