An accurate and efficient algorithm for computing non-equilibrium Green’s functions has been developed and used in the simulations of a novel nanoscale MOSFET device structure. The method is based on the principle of nested dissection and demonstrates significant performance improvement from both speed and memory requirements points of view as compared to the state of the art recursive Green’s ...

We present the two-dimensional optimization of the acceptor doping profile of a 0.25 /im MOSFET which improves the drive current by 48% compared to a uniformly doped device delivering the same drain-source leakage current. Various values for the supply voltage and the allowed leakage current are used to qualitatively investigate their influence on the optimal profile.

Fluctuations in the processing parameters can lead to a separation between the gate and the sourceldrain extensions in MOSFETs. A O.lpm MOSFET was simulated with 5%, and 10% separation and it was found that the transconductance was reduced, the threshold voltage was not significantly changed, and that there was no effect on the breakdown because the device has suffered punchthrough rather than ...

Semiconductor technology has achieved remarkable results through its evolution over the years. Today’s devices have significantly improved performance, especially in reduced drain-source on-state resistance, lower gate charge, and faster switching speeds. The overall system low-power consumption and higher performance is the name of the game in today’s competitive world. Most power MOSFET devic...

The low power consumption and good speed has become an important issues in the minds of consumers as electronic items are increasing in every houses, everyday. VLSI has been very successful in this aspect as new and new technologies are been developed in VLSI, which has lead, a solution to the above problem. DG MOSFET, proposed in 1984 as “XMOS” by ETL is the most promising and leading contende...

Various compact models have been of great interest and studied for deep-submicron metal-oxide-semiconductor field effect transistor (MOSFET) device simulation. The model parameters extraction intrinsically characterizes properties of designed and fabricated devices. It leads to a multidimensional optimization problem to be solved and extracted efficiently for the applications to very large scal...

FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. In this paper different types of the po...

In this paper, a new low voltage MOSFET (LV MOSFET) and high dual-gate (HV DG have been proposed with concept of integration based on trench technology InGaAs material. Junction isolation technique is used for the implementation power dual gate in same epitaxial layer side by side. The HV consists that are placed drift region under oxide-filled trenches. structure minimize on-resistance (Ron) a...

In this paper, a power SJMOSFET (Super junction MOSFET) transistor is simulated using PISCES-II, a 2-D numerical device simulator. The doping densities and device dimensions are chosen so as to simulate a typical device structure. These simulations are aimed at understanding the device physics through various electrical quantities like potential distribution, electric field distribution, and el...