A dielectrically defined gate process has been developed that uses optical lithography to pattern near quarter micron Tgates. Record output power densities of 2.0 and 1.8 W/mm have been measured at 2 and 10 GHz, respectively. When applied to an X-band MMIC circuit, significantly higher power was measured. The new process offers improved performance and throughput compared to the standard ebeam ...

A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is performed. The trapping-detrapping mechanisms on deep levels are particularly adressed and a method is proposed to circumvent the collapse phenomenom which otherwise limits the electrical performances. From these measurements a HEMT non-linear model is extracted and is fo...

This paper gives an overview of recently developed frequency domain measurement and modelling techniques for non-linear microwave components. The system architecture and measurement capabilities of the Hewlett-Packard “Non-linear Network Measurement System” are described. Three modelling techniques, based on the new instrument measurement data, are discussed: empirical models, state-space model...

This paper presents an overview of the noise modeling extraction methods developed at the Microwave Electronics Laboratory at Chalmers University of Technology. The presented methods are suitable for different kinds of noise models, the one and two parameter Pospieszalski model, and the three parameter PRC model. We also present a low power low noise amplifier. Introduction To facilitate the de...