نتایج جستجو برای: power amplifier

تعداد نتایج: 500653  

2006
L. Svilainis G. Motiejûnas

Design of the power amplifier for ultrasonic transducer excitation is presented. We assumed that the amplifier output impedance will be significantly lower than the transducer input impedance. Therefore we suggest to used the transformer as voltage step-up and impedance matching element. The transformer influence on the ultrasonic transducer bandwidth and the power transfer efficiency are analy...

2009
X. Yang X. Chu T. Song T. Foo D. Yeo

INTRODUCTION: In our previous work on passive current source RF power amplifiers, it was noted that additional inter-element isolation in a parallel transmit coil array was possible when the lengths of the coaxial cables that connected the amplifiers to the coils were reduced [1,2]. In addition, shorter cable lengths also lead to reduced power loss and cost. This can be achieved by placing the ...

2001
Chunming Liu Heng Xiao Qiang Wu Fu Li

One of the critical and costly components in digital cellular communication systems is the RF power amplifier. Theoretically, one of the main concerns in an RF power amplifier design is the nonlinear effect of the amplifier. Quantitatively, so far, no explicit relationship or expression currently exists between the out-ofband emission level and the nonlinearity description related to the third-...

2014
T.Manasa Krishna

As per the Moore’s law, there is an extreme increase in number of on chip devices, this increase in chip density results in power dissipation and thus the power utilization is unsatisfactory. So to avoid this problem the concept of Low Power system arises. As a part of microelectronics, it has been proposed to make the choice of minute circuit with attraction added by use of MOS cells. Since we...

2016
Adam Winter Jerry Cornwell

Many modern EW systems require low noise receivers capable of withstanding wide input power variations over a multioctave bandwidth. These receivers are necessary to protect sensitive components from RF overdrive or to remove AM modulation from incoming signals. Further, multichannel system designs and proximity to the receiver antenna generate requirements for low power and small package size....

2001
Tirdad Sowlati Domine M. W. Leenaerts

A two-stage self-biased cascode power amplifier in 0.18m CMOS process for Class-1 Bluetooth application is presented. The power amplifier provides 23-dBm output power with a power-added efficiency (PAE) of 42% at 2.4 GHz. It has a small signal gain of 38 dB and a large signal gain of 31 dB at saturation. This is the highest gain reported for a two-stage design in CMOS at the 0.8–2.4-GHz frequen...

2014
Manoj Sharadrao Awakhare

The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in TSMC 0.18-μm CMOS technology present in this paper. Proposed Class E cascode PA topology is a single-stage topology in order to minimize the device stress problem. A parallel capacitor is connected across the transistors for efficiency enrichment also for dominating the effect of parasitic capacitances at ...

2006
D. Wiegner U. Seyfried W. Templ T. Naß S. Weber S. Wörner I. Dettmann R. Quay F. van Raay H. Walcher H. Massler M. Seelmann-Eggebert R. Reiner R. Moritz R. Kiefer

A single stage wideband amplifier based on an AlGaN/GaN HEMT power cell with a total gate-width of 16 mm matched to 50 Ohm has been successfully developed and characterized by use of a single-carrier W-CDMA signal. A very wide bandwidth of more than 1.7 GHz covering several mobile radio frequency bands within Land S-band with peak output power levels up to 44 dBm has been demonstrated with meet...

2005
Wendy N. Edelstein Constantine Andricos Feiyu Wang David B. Rutledge

Future interferometric synthetic aperture radar (InSAR) systems require electronically scanned phased-array antennas, where the transmit/receive (T/R) module is a key component. The T/R module efficiency is a critical figure of merit and has direct implications on the power dissipation and power generation requirements of the system. Significant improvements in the efficiency of the T/R module ...

2004
Abbas Komijani Ali Hajimiri

A 24GHz, +14.5dBm fully-integrated power amplifier with 50Ω input and output matching is fabricated using 0.18μm CMOS transistors. To enable this, a shielded-substrate coplanar waveguide transmission line structure is used to achieve low loss and small area. The power amplifier achieves a power gain of 7dB and a maximum single-ended output power of +14.5dBm with a 3dB bandwidth of 3.1GHz, while...

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