نتایج جستجو برای: reactive ion etching
تعداد نتایج: 366052 فیلتر نتایج به سال:
Projection imaging of 0.1-microm lines and spaces is demonstrated with a Mo/Si multilayer coated Schwarzschild objective and 14-nm illumination from a laser plasma source. This structure has been etched into a silicon wafer by using a trilevel resist and reactive ion etching. Low-contrast modulation at 0.05-microm lines and spaces is observed in polymethylmethacrylate.
A multiple deposition and etching process has been developed to enable high fill factor boron deposition in high aspect ratio holes fabricated in a (100) silicon substrate. The boron deposition was carried out using low-pressure chemical vapor deposition and the etching was done by inductively coupled plasma reactive ion etching technique. The boron deposition processes were carried out under d...
Laser microlens array (MLA) lithography was used to fabricate arbitrary periodic array of patterns on photoresist. Reactive ion etching (RIE) was then utilized to etch and transfer the patterns down to the fused silica substrate. By controlling the etching process, the etched surface was 180° out of phase with the unetched surface. Subsequently, the patterns were used as a phase shift mask for ...
In this paper, we report a technique that uses piezoelectric polyvinylidene fluoride (PVDF) microbelts to convert the energy from low-speed air flow to electricity via their resonant oscillation. The micrometre thick PVDF thin films were fabricated by a top-down reactive ion etching process, where the thickness was controlled by etching time and the piezoelectric phase was well preserved. The t...
We propose the use of binary slanted surface-relief gratings with parallel-groove walls as input and output couplers in a planar optical interconnect. Parametric optimization of cascaded output couplers is employed to design an interconnect consisting of N output couplers producing a uniform intensity distribution with a high efficiency that may be realized in one lithographic etching step. The...
In this paper we reported the results on the low-temperature thermal oxidation of Si nanowires. Various polygon-shaped Si nanowires with linewidths between 100 and 300 nm were fabricated on Si/Si1ÿxGex=Si heterostructure substrates by using lithography, reactive ion etching, and subsequent selective chemical etching. We find that oxidized Si nanowires following 750 and 775 C wet oxidation will ...
We demonstrate wide-area fabrication of sub-40 nm diameter, 1.5 µm tall, high aspect ratio silicon pillar arrays with straight sidewalls by combining nanoimprint lithography (NIL) and deep reactive ion etching (DRIE). Imprint molds were used to pre-pattern nanopillar positions precisely on a 200 nm square lattice with long range order. The conventional DRIE etching process was modified and opti...
Dry etching techniques employing ion beam induced surface reaction and the possibility of highly charged ion beam in dry etching are described, and the preliminary work on dry etching of GaAs using highly charged ion (HCI) is also presented. In usual dry etching, total etch rate is a summation of the physical sputtering rate, the chemical etching rate, and the ion-induced chemical etching rate....
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