Transparent dielectric layers with varying compositions of TiO2 and SiO2, and ITO are deposited on sapphire and Si substrates by using an RF sputter system. Inductively coupled plasma (ICP) reactive ion etching (RIE) of the ITO hard mask is examined under H2, CH4, and Cl2 chemical environments. The slope of the sidewall and the etch residue on the sidewall of the ITO hard mask are controlled by...

A new, versatile architecture is presented for microfluidic devices made entirely from glass, for use with reagents which would prove highly corrosive for silicon. Chips consist of three layers of glass wafers bonded together by fusion bonding. On the inside wafer faces a network of microfluidic channels is created by photolithography and wet chemical etching. Low dead-volume fluidic connection...

We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. use high-optical-quality and thin (~ 300 nm) membrane, supported by polycrystalline frame, to realize fully suspended with high theoretical quality factor of ~ $8\times10^6$ relatively small mode volume ~2$({\lambda}/n)^3$. The are fabricated the membrane usi...

This paper provides an overview of fabrication and design of CMOS-based microelectromechanical systems with emphasis on inertial sensor and data storage applications. High-aspect-ratio (4.4:1) microstructures can be fabricated using conventional CMOS processing followed by a sequence of maskless dry-etching steps. The CMOS dielectric and metallization layers, normally used for electrical interc...

We discuss growth of high-quality carbon nanotube (CNT) films on bare and microstructured silicon substrates by atmospheric pressure thermal chemical vapor deposition (CVD), from a Mo/Fe/Al2O3 catalyst film deposited by entirely electron beam evaporation. High-density films having a tangled morphology and a Raman G/D ratio of at least 20 are grown over a temperature range of 750–900 C. H2 is ne...

Figure 1 . Anisotropic etching of graphite by H 2 -plasma. a–c) AFM images of pristine, 50 W plasma-etched, and 100 W plasma-etched graphite. Plasma etching was performed at 500 ° C for 2 h. Magnifi ed images for the marked areas are shown. d) Measured maximum etching rate of graphite at various etching temperatures. The plasma power was 100 W. Solid lines represent Lorentzian line shape fi ts....

objectives: this study aimed to assess the effect of re-etching of desensitized dentin for five and 10 seconds on marginal microleakage of composite restorations. materials and methods: class v cavities (4x2x2mm) were prepared on the buccal surfaces of 64 third molars and randomly divided into four groups of 16. in the control group, single bond (sb) adhesive was applied after etching. in bb+sb...