Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-lo...

We present a method to increase the stability of DNA nanostructure templates through conformal coating with a nanometer-thin protective inorganic oxide layer created using atomic layer deposition (ALD). DNA nanotubes and origami triangles were coated with ca. 2 nm to ca. 20 nm of Al2O3. Nanoscale features of the DNA nanostructures were preserved after the ALD coating and the patterns are resist...

This paper presents accurate fault models, an accurate fault simulation technique, and a new fault coverage metric for resistive bridging faults in gate level combinational circuits at nominal and reduced power supply voltages. We demonstrate that some faults have unusual behavior, which has been observed in practice. On the ISCAS85 benchmark circuits we show that a zero-ohm bridge fault model ...

It is demonstrated that a Bragg waveguide consisting of a series of dielectric layers may form an excellent optical acceleration structure. Confinement of the accelerating fields is achieved for both planar and cylindrical configurations by adjusting the first dielectric layer width. A typical structure made of Silica and Zirconia may support gradients of the order of 1GV/m with an interaction ...

Dual-layer resistive switching devices with horizontal W electrodes, vertical Pd electrodes and WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit well-characterized analog switching characteristics and small mismatch in electrical characteristics for devices formed at the two layers. The three-dimensional (3D) ver...

Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600 C were composed ...

The use of vaginal electrical resistance (VER) for estrous detection and early pregnancy diagnosis were evaluated using three experiments in dairy cattle, in Ethiopia. VER was measured: 1) during the natural estrous (n = 60) cycle, 2) during estrus induced by GnRH+ PGF2· (n = 11) and 3) during post insemination in dairy cows synchronized with GnRH+CIDR+PGF2· (n = 25). Results from Experiment 1 ...