نتایج جستجو برای: called the v

تعداد نتایج: 16105411  

This paper proposes the use of DTMOS transistors in a memristor-based ternary CAM (MTCAM) instead of MOSFET transistors. It also evaluates the effect of forward body biasing methods in DTMOS transistors on the performance of a MTCAM cell in write mode. These biasing methods are gate-to-body tying (called DT1), drain-to-body tying (called DT2), and gate-to-body tying with a voltage supply of 0.1...

Journal: :international journal of group theory 2016
zeinab mehranian ahmad gholami ali reza ashrafi

suppose $gamma$ is a graph with $v(gamma) = { 1,2, cdots, p}$and $ mathcal{f} = {gamma_1,cdots, gamma_p} $ is a family ofgraphs such that $n_j = |v(gamma_j)|$, $1 leq j leq p$. define$lambda = gamma[gamma_1,cdots, gamma_p]$ to be a graph withvertex set $ v(lambda)=bigcup_{j=1}^pv(gamma_j)$ and edge set$e(lambda)=big(bigcup_{j=1}^pe(gamma_j)big)cupbig(bigcup_{ijine(gamma)}{uv;uin v(gamma_i),vin ...

We define a notion of cosheaves on diffeological spaces by cosheaves on the site of plots. This provides a framework to describe diffeological objects such as internal tangent bundles, the Poincar'{e} groupoids, and furthermore, homology theories such as cubic homology in diffeology by the language of cosheaves. We show that every cosheaf on a diffeological space induces a cosheaf in terms of t...

Journal: :Proceedings of the Japan Academy 1957

Journal: :The Classical Review 1892

Journal: :The Muslim World 1922

Journal: :Nippon kagaku zassi 1952

This paper critically examines the Short Channel Effects (SCEs) improvement techniques for improving the performance of SOI-MOSFETs.  Also for first time, a new device structure called the Shielded Channel Multiple-Gate SOI-MOSFET (SC-MG) is introduced and designed. Using two-dimensional and two-carrier device simulation, it is demonstrated that the SC-MG exhibits a significantly reduced the el...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید