Carter, A. O., and Morley R. (1969). Brit. J. industr. Med., 26, 217-223. Electric current flow through human skin at power frequency voltages. Alternating power voltages were applied to small pieces of living skin. Current and voltage were recorded continuously using voltages from 25 V to 250 V. At the lower voltages the skin appeared unaffected, but rapid destruction occurred at the higher vo...

Despite numerous studies on spinal neuronal systems, several issues regarding their role in motor behavior remain unresolved. One of these issues is how electric fields associated with the activity of spinal neurons influence the operation of spinal neuronal networks and how effects of these field potentials are combined with other means of modulating neuronal activity. Another closely related ...

Nanopores are now being used not only as an ionic current sensor but also as a means to localize molecules near alternative sensors with higher sensitivity and/or selectivity. One example is a solid-state nanopore embedded in a graphene nanoribbon (GNR) transistor. Such a device possesses the high conductivity needed for higher bandwidth measurements and, because of its single-atomic-layer thic...

In this paper, we present an RIP module with the features of supporting multiple inductive sensors, no variable frequency LC oscillator, low power consumption, and automatic gain adjustment for each channel. Based on the method of inductance measurement without using a variable frequency LC oscillator, we further integrate pulse amplitude modulation and time division multiplexing scheme into a ...

Stochastic noises have a great adverse effect on the prediction accuracy of electric power load. Modeling online and filtering real-time can effectively improve measurement accuracy. Firstly, pretreating and inspecting statistically the electric power load data is essential to characterize the stochastic noise of electric power load. Then, set order for the time series model by Akaike informati...

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...