1 Introduction Zinc oxide (ZnO) is a II–VI wide-band-gap compound semiconductor, which has promising applications in light-emitting diodes [1], field-effect transistors [2], laser diodes [3], solar cells [4], sensors [5], etc. due to its environmental friendliness, abundant availability in nature, highly evolved growth technologies, compatibility with metal–oxide–semiconductor technology, and s...

As semiconductor devices are scaled into nanoscale regime, first velocity saturation starts to limit the carrier mobility due to pronounced intervalley scattering, and when the device dimensions are scaled to 100 nm and below, velocity overshoot starts to dominate the device behavior leading to larger ON-state currents. Alongside with the developments in the semiconductor nanotechnology, in rec...

The Metal-Ferroelectric-Semiconductor FET (MFSFET) device is structurally similar to a regular MOSFET device except that the gate material is composed of a ferroelectric material (PZT) normally sandwiched between two layers of silicon dioxide. Ferro models the PZT material with a set of four material parameters; the saturation polarization Ps, the remanent polarization Pr, the coercive field Ec...

In response to the requests of recent years for electronic devices that are smaller, lighter, thinner and consume less power, Fuji Electric has concentrated on the field of power supply ICs and has been developing smart power technology. To increase the packing density and reduce on-resistance of the switching devices integrated into a power IC, Fuji Electric has been producing and has verified...

A design methodology for the edge termination is proposed to achieve the same breakdown voltage of the non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) cell structure. A simple analytical solution for the effect of charge imbalance on the termination region is suggested, and it is satisfied with the simulation of potential distribution. The dopi...

We apply our self-consistent PDE model for the electrical response of field-effect sensors to the 3D simulation of nanowire PSA (prostate-specific antigen) sensors. The charge concentration in the biofunctionalized boundary layer at the semiconductor-electrolyte interface is calculated using the propka algorithm, and the screening of the biomolecules by the free ions in the liquid is modeled by...

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device ch...

There is strong interest in realizing genomic molecular diagnostic platforms that are label-free, electronic, and single-molecule. One attractive transducer for such efforts is the single-molecule field-effect transistor (smFET), capable of detecting a single electronic charge and realized with a point-functionalized exposed-gate one-dimensional carbon nanotube field-effect device. In this work...

Two dimensional (2D) semiconductors have attracted attention for a range of electronic applications, such as transparent, flexible field effect transistors and sensors owing to their good optical transparency and mechanical flexibility. Efforts to exploit 2D semiconductors in electronics are hampered, however, by the lack of efficient methods for their synthesis at levels of quality, uniformity...

The performance limits of carbon nanotube field-effect transistors ~CNTFETs! are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ~MOSFETs!. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNT...