A SiGe micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated for the first time. Our experimental results show that the input return loss S11 is below 18 dB from DC to 20 GHz with voltage gains of 32, 26, and 25 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input ...

An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35m BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, whic...

This paper presents a compact two-stage ultrawideband low-noise amplifier (LNA). A common-gate topology is adopted for the input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. A low power consumption and a small chip area are obtained by optimizing the performance of the LNA with tight constraint on biasing ...

Presented is the performance of a highly integrated RF single-pole double-throw (SPDT) switch fabricated in a 0.18 μm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes ∼40 μA from a 3.4 V supply. The switch, based upon the 1.8 V thinoxide devices with resistive body-floating and unit cell layout optimisati...

There are several 60 GHz transceiver architectures that have been explored and reported in the past employing the On Off Keying (OOK) Modulation. All of these designs are primarily based on the conventional bulk CMOS architecture. In this paper, we propose a power efficient double gate (DG) MOSFET based OOK Transmitter in 32 nm DG FinFET technology. The proposed novel OOK modulator consists of ...

In this paper, a summary of our work in the area of tunable microwave circuits based on thin film ferroelectrics is presented. First, a technique is introduced to improve the linearity of thin film ferroelectric tunable capacitors. Measurements show an improvement in the 3rd order intermodulation point at the input (IIP3) of 16 dB. Next, the design and fabrication of an impedance tuner employin...

A large dynamic-range Variable Gain Amplifier (VGA) suitable for Ultra Wide Band (UWB) applications is presented. The VGA is composed of three programmable variable gain amplifier stages followed by an output buffer. Such wide bandwidth allows our proposed VGA to be used in multi-standard protocols. Power reduction is developed for the variable gain amplifier stages. Thorough analyses of the mi...

A highly linear, low voltage, low power, low noise amplifier (LNA) using a novel nonlinearity cancellation technique is presented in this paper. Parallel Inductor (PI) matching is used to increase LNA gain by 3 dB at the desired frequency. The linear LNA was designed and simulated in a TSMC 0.18μm CMOS process at 5GHz frequency. By employing the proposed technique, the IIP3 is improved by 12 dB...

This paper presents linearity enhancement technique for GHzband low noise amplifier (LNA). To verify this technique, we designed LNA using 0.18-μm BiCMOS process. Linearity is very important parameter for LNA. The MOS-BJT derivative superposition (MBDS) technique is exploited by a parallel LC tank in the emitter of bipolar transistor to reduce the secondorder non-linear coefficient (gm2) relate...

This paper presents an investigation of noise figure optimization techniques for a 915 MHz CMOS Low Noise Amplifier (LNA). The research’s goal is to evaluate the trade off between fully and partially integrated solutions for 915 MHz CMOS LNA. The analysis considers an inductively source-degenerated cascode topology, which is capable of achieving simultaneous noise and input match, with narrow b...