نتایج جستجو برای: low turn on voltage

تعداد نتایج: 8988319  

Journal: :E3S web of conferences 2021

Low on-state voltage and low turn-off loss are key issues for IGBT used in HVDC FACTS. Partial narrow mesa was introduced to improve emitter side contact resistance of based on Nakagawa limit assumption. However, increases short circuit sustainability get worse. Split gate separates electrode from drift region reduces gate-collector capacitance lower energy loss. Combination partial with split ...

Power gating technique reduces leakage power in the circuit. However, power gating leads to large voltage fluctuation on the power rail during power gating mode to active mode due to the package inductance in the Printed Circuit Board. This voltage fluctuation may cause unwanted transitions in neighboring circuits. In this work, a power gating architecture is developed for minimizing power in a...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم 1392

gol-e-gohar iron ore mine of sirjan in southern part of iran is a large open pit that operates below the groundwater table and during mining operation, dewatering is required to prevent operation processes from flooding. current operation is going on by digging wells in or out of the pit and pumping to prevent flooding. as a result of the former dewatering operation a vast deep cone of depressi...

2000
Alexander Fiel Thomas Wu

As the demand for the telecom/server power is growing exponentially, the need for higher power density increases each year. Increasing power density relies on less component counts, smaller reactive component size, and/or better system efficiency. Higher switching frequency leads to the smaller reactive and filter component size. Better efficiency, which reduces the heat sink or paralleled devi...

2001
Jeong-il Kang Chung-Wook Roh Gun-Woo Moon Myung-Joong Youn

A new high-power step-up converter based on the phase-shifted parallel-input/series-output (PISO) modular converter with two dual inductor-fed push-pull converters is proposed. It is operated at a constant duty cycle and the output voltage is controlled with a phase-shift between the modules. It shows an output voltage which is high and linear to the control input, and a low switch turn-off str...

2013
Purnima Hazra S. K. Singh

In this paper studies on Si/ZnO heterojunction diode is presented. In this work Zinc oxide (ZnO) was conformally deposited on Silicon (Si) Wafer by atomic layer deposition (ALD) technique without using a buffer layer. For low-temperature ALD deposition, diethyl zinc (DEZn) and deionized (DI) water were used as the sources for zinc and oxygen respectively. Surface characterization and optical ch...

 In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the tr...

Amin Kolahdooz, P. Sadr, S.A. Eftekhari

Electrical discharge machining process, is one of the most widely used methods for machining, the electrically conductive parts. In this way the tool is not in contact with the workpiece and the hardness of workpiece does not affect the machining speed. In Electrical Discharge Machining process, selection of the correct machining parameters are effective in final cost and the quality of the pro...

H Alaei M Hoseini M.R SHarifi R Ataei

Introduction:Exercise and physical activity are important factors for human health.It has been reported that exercise can be considerably useful in the teratment of psychological diseases.in the present study the effect of running on Spontaneous Electroencephalographic Activity (EEG) of rats was investigated.   Method:Male wistar rats weighting 190-250 gr were selected and divided into contro...

In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...

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