Waveguides from thermally evaporated Ge23Sb7S70 films have been fabricated using both plasma etching and lift-off techniques. The two methods have been compared in their ability to provide high quality, low-loss waveguides for microphotonics applications. We have demonstrated in this paper that low-loss 3 lm and 4 lm wide channel waveguides can be fabricated using CHF3 and SF6 plasma etching, a...

Functional glass surfaces with the properties of superhydrophobicity/or superhydrohydrophilicity, anti-condensation or low reflectance require nano- or micro-scale roughness, which is difficult to fabricate directly on glass surfaces. Here, we report a novel non-lithographic method for the fabrication of nanostructures on glass; this method introduces a sacrificial SiO2 layer for anisotropic pl...

For more precise control of plasma etching processes, a better understanding of interaction of ions and radicals contained in plasmas with Si, SiO2 and SiN surfaces is desirable. In this study, mass-analyzed ion beam experiments were employed to clarify hydrogen effects during plasmas etching process containing hydrogen such as HBr and hydrofulorocarbon. It has been shown that H + ion injection...

The effect of radio frequency ~rf! bias frequency on SiO2 feature etching using inductively coupled fluorocarbon plasmas is investigated. It is found that the rf bias frequency can have an important effect on SiO2 feature etch rate, microtrenching phenomena, and SiO2-to-photoresist etch selectivity. In addition, the effect of rf bias pulsing on inductively coupled fluorocarbon plasma SiO2 etchi...

A multiple deposition and etching process has been developed to enable high fill factor boron deposition in high aspect ratio holes fabricated in a (100) silicon substrate. The boron deposition was carried out using low-pressure chemical vapor deposition and the etching was done by inductively coupled plasma reactive ion etching technique. The boron deposition processes were carried out under d...

Diffractive optical elements (microlenses) for quantum well infrared photodetectors (QWIPs) were fabricated by two techniques: 1) standard lithography of a binary optical structure and 2) PMMA pattern transfer for an analog diffractive optic structure. The binary lenses were fabricated by sequential contact lithography and etching using two binary masks. The analog diffractive lenses were fabri...

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-ass...

The preparation of the cavity walls has been one of the major challenges in the superconducting radio-frequency (SRF) accelerator technology. Therefore, constant research and development effort is devoted to develop surface preparation processes that will improve roughness and lower the level of impurities, like hydrogen or oxygen, embedded in bulk Nb, having in the same time reasonable etching...