Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatiallydivided ...

the major foible of dental ceramics is their brittle nature. therefore, the producers of these materials have focused on the “strength” issue. a method of increasing strength is ion exchange on porcelain surface which leads to formation of a compressive crust that opposing forces should overcome before developing a crack. in current study, ion exchange in two types of porcelain, ceramco ii whic...

UNLABELLED Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared ...

We present a simulation of the Bosch process using the feature-scale modeling software FPS3D. FPS3D is a generic simulator that can be applied to any set of materials, plasmas, reactive gases, and reactions for both 2D and 3D simulations of etching and deposition. FPS3D can simulate multi-time-step processes for which the fluxes, species, reactions, ion energies, angular distributions, and othe...

Recent work at SNL has demonstrated unique capabilities to experimentally measure a variety of ion and neutral particle parameters inside surface features being etched, including ion energy, angular distributions, ion and neutral species measurements. This report details the construction of one recent laboratory tool designed to measure ion beam uniformity over the wafer surface in a reactive i...

We demonstrate a simple and efficient optical coupler for vertical coupling between optical fibers and InP-based waveguides using a slant-etched mirror. The angle of the etched mirror can be controlled by using an aluminum jig with a beveled surface inserted under the substrate during RIE (reactive ion etching) of InP/InGaAsP. The offchip coupler is fabricated simultaneously with a high-mesa wa...

Tracers provide an important means of interrogating the subsurface to provide critical information about hydraulic characteristics of the reservoir. In a geothermal reservoir, reactive tracers may add information about the thermal state of the reservoir. Tracer test analysis methods vary, but generally involve curve fitting to a simple model of the system or a moment analysis approach. The Idah...

The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism was discovered in mostly Ar plasmas with a few percent added Cl2, but was found to be even more important in pure Cl2 plasmas. Nearly monoenergetic ion energy distributions (IEDs) were obtained by applying a synchronous dc bias on a “boundary electrode” during the af...

MEMS@MIT RESEARCH ABSTRACTS 2007 16 Figure 1: a) A 600-nm SiNx membrane folded to 900. b) Magnified view of folded region, which was thinned to 150 nm by CF4 RIE. The ion implantation was done at 16kV with a dose of 1018 ions/cm2. c) View of a 180o fold illustrating typical fold radius of about 1μm. p Figure 2: The layer-to-layer alignment error for 100μm ×100μm ×1 μm SiNx membranes that were f...

In micromechanics, the etching of high aspect ratio structures in polymers is a grime technology. Normally, oxygen-based reactive ion etching or the LIGA technique are used to achieve this goal. This paper reintroduces a different idea to create deep trenches at high etch speed: The ion beam etching of TeflonTM. Because of its extraordinary properties the etch selectivity with respect to most o...