Here Vi(t) models the membrane potential of neuron i ∈ {1, 2}. The parameter τ is the time constant of the passive membrane, and μ = −64mV is the rest potential of the neuron. The function f(Vi) is a cellular nonlinearity that differed across the cases; this was needed to be consistent with our previous published reports that first described each model results. When a neuron’s voltage reaches a...

A simple and accurate analytical model for the threshold voltage of AlGaN/GaN high electron mobility transistor (HEMT) is developed by solving three-dimensional (3-D) Poisson equation to investigate the short channel effects (SCEs) and the narrow width effects present simultaneously in a small geometry device. It has been demonstrated that the proposed model correctly predicts the potential and...

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively investigated using a unique, scale-length based methodology. Quantum mechanical effects and fringeinduced barrier loweri...

Scaling supply voltage is an efficient technique to achieve low power-delay product. This study presents low-power Single-Rail MOS Current Mode Logic (SRMCML) circuits which operate on near-threshold region. The near-threshold operations for the basic SRMCML circuits such as inverter/buffer, OR2/NOR2 and 2/NAND2, OR3/NOR3 and XOR3/NXOR3 are investigated. All circuits are simulated with HSPICE a...

Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred ...

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concept in modern microcircuits. High energy carriers also called hot carriers are generated in the MOSFET by the large channel electric field near the drain region. The electric field accelarates the carriers to effective temperatures well above the lattice temprature. These hot carriers transfer energy ...

We have developed a model for the impact of the hydrogen-induced piezoelectric effect on the threshold voltage of InP HEMTs and GaAs PHEMTs. We have used two-dimensional (2-D) finite element simulations to calculate the mechanical stress caused by a Ti-containing metal gate that has expanded due to hydrogen absorption. This has allowed us to map the 2-D piezoelectric charge distribution in the ...

A concise arrafytical expression for switch-induced error voltage on a switched capacitor is derived from the distributed MQSFET model. The result, however, can be interpreted in terms of a simple lumped equivalent circuit. With this expression we explore the dependence of the error voltage on process, switch turnoff rate, source resistance, and other circuit parameters. These results can be us...

The voltage dependence of indices of axonal excitability were quantified for cutaneous afferents in eight normal subjects, using the threshold for a target compound sensory action potential as a measure of membrane potential. The membrane potential was altered using subthreshold depolarizing and hyperpolarizing currents of various sizes (-50% to +50% of threshold). Refractoriness and supernorma...