نتایج جستجو برای: etching time

تعداد نتایج: 1900968  

ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...

Journal: :international journal of nano dimension 0
f. alfeel department of physics, science faculty, damascus university, syria. f. awad department of physics, science faculty, damascus university, syria. i. alghoraibi department of physics, science faculty, damascus university, syria. f. qamar department of physics, science faculty, damascus university, syria.

porous silicon samples were prepared by electrochemical etching method for different etching times. the structural properties of porous silicon (ps) samples were determined from the atomic force microscopy (afm) measurements. the surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. u...

Journal: :journal of dentistry, tehran university of medical sciences 0
shahram mosharrafian hossein afshar maryam farbod zahra baniameri

objectives: this in-vitro study aimed to compare the push-out bond strength of composite to prepared and unprepared intracanal dentin using a 5th generation bonding agent in primary anterior teeth after etching for seven and 15 seconds. materials and methods: sixty primary anterior teeth were randomly divided into four groups. in groups one and two, intracanal dentin remained intact while in gr...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز 1358

موضوع تز درباره ثبت ذره آلفا در پلیمری بنام پلی کربنیت و آشکار ساختن ردپای آن (track) بوسیله روش خرش الکتروشیمی (electrochemical etching) است ذره آلفا در سر زاه خود بیشتر بوسیله یونیزه کردن ردپائی در پلی کربنیت از خود باقی میگذارد که این ردپا را میتوان با بکار بردن محلول شیمیائی مانند koh و یا محلول ئیدرات پتاسیم در الکل (pew) آشکار ساخت ولی با بکار بردن برق عمل خرش تسریع شده در مدت نسبتا کمی ر...

Journal: :journal of dentistry, tehran university of medical sciences 0
ahmad najafi abrandabadi seyedeh mahsa sheikh-al-eslamian narges panahandeh

objectives: the aim of this in-vitro study was to assess the thermal effect of light emitting diode (led) light curing unit on the enamel etching time. materials and methods: three treatment groups with 15 enamel specimens each were used in this study: g1: fifteen seconds of etching, g2: five seconds of etching, g3: five seconds of etching plus led light irradiation (simultaneously). the micro ...

2016
R. Zahran J. I. Rosales Leal M. A. Rodríguez Valverde M. A. Cabrerizo Vílchez

Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF) acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability,...

2017
Zhaoyun Zhang Wei Su Bin Tang Wei Xu Zhuang Xiong

It is meaningful to study the surface morphology of monocrystalline material, but there are few studies on the surface roughness of quartz. So, surface roughness of Z-cut quartz etched by pure ammonium bifluoride and ammonium bifluoride mixed with isopropyl alcohol (IPA) solution was investigated for the first time in this paper. Firstly, when etching in pure ammonium bifluoride solutions, the ...

2013
Arash Dehzangi Farhad Larki Sabar D. Hutagalung Mahmood Goodarz Naseri Burhanuddin Y. Majlis Manizheh Navasery Norihan Abdul Hamid Mimiwaty Mohd Noor

In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (10(15) cm(-3)) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The i...

2016
Siti Noorhaniah Yusoh Khatijah Aisha Yaacob

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were in...

Journal: :Journal of microscopy 2004
L H Haber R D Schaller J C Johnson R J Saykally

Dynamic etching methods for fabricating fibre optic tips are explored and modelled. By vertically translating the fibre during etching by an HF solution under an organic protective layer, a variety of tip shapes were created. The probe taper lengths, cone angles and geometrical probe shapes were measured in order to evaluate the dynamic meniscus etching process. Fibre motion, etching rate, meni...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید