colloidal quantum dots offer broad tuning of semiconductor band structure via the quantum size effect. in this paper, we present a detailed investigation on the influence of the thickness of colloidal lead sulfide (pbs) nanocrystals (active layer) to the photovoltaic performance of colloidal quantum dot solar cells. the pbs nanocrystals (qds) were synthesized in a non-coordinating solvent, 1-oc...

In this supplement to formal class lectures, we develop the small signal models for metaloxide-semiconductor field-effect transistor (MOSFET) technologies. Despite the exclusive focus on MOS technologies, the reader will surmise that the fundamental concepts and strategies of small signal modeling presented herewith are generally applicable to bipolar, III-V compound, and other semiconductor de...

Semiconductor nanowire field effect transistors have emerged as a promising technology for development of label-free biomolecular sensors for rapid diagnostics. However, their practical application has been hindered due to the significant device-to-device variations in electrical properties and the need for individual sensor calibration. Recent advances in device fabrication and demonstrations ...

The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, ...

Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ...

A neuro-fuzzy network approach is developed to model the nonlinear behavior of submicron metal-oxide semiconductor field-effect transistors (MOSFETs). The proposed model is trained and implemented as a MOSFET in a software environment. The training data are obtained through various simulations of a MOSFET Berkeley short channel insulated-gate field-effect transistor model 3 (BSIM3) in HSPICE, a...

In semiconductor spintronics, electron spin rather than charge is the key property. This paper describes several spin-related devices using spin-orbit interaction. We have experimentally confirmed that the spin-orbit interaction in a semiconductor two-dimensional electron gas channel can be controlled by a gate voltage. This is the first step towards the creation of functional spin devices. The...

The operation of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is based on the fact that the lateral conductivity of silicon at the silicon dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between metal gate and oxide, and applying a voltage across the insulator on top of the silicon, the lateral conducti...