نتایج جستجو برای: gallium arsenide
تعداد نتایج: 16417 فیلتر نتایج به سال:
Optical systems are being developed to reach the functionality and large-scale integration of electronic systems. Strides are being made to develop an on-chip optical system by designing and fabricating an Optical NanoElectroMechanical, ONEM, device structure based in a gallium arsenide material system. Gallium arsenide, a III-V compound semiconductor, was chosen due to its high-refractive inde...
High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...
Gallium Arsenide (GaAs) based microsensors, analog readout electronics, analog to digital converters and digital signal processors have been in development. Microsensors include accelerometers, infrared sensors, and micromachines with high speed sensing response, extreme temperature operation, and high radiation hardness.
This paper reviews our recent experimental work on erbium incorporated into gallium arsenide during MBE growth. The electrical behaviour of the erbium is considered in relation to its interaction with intentionally added dopants (silicon, selenium and berylium) and the effect of the erbium on the deep state population is discussed. At higher concentrations the morphology of phase separation is ...
X-ray diffraction characterization of materials used in traditional silver halide and digital semiconductor photographic systems is described. Silver halide grains precipitated as multicomponent AgBr1-xIx phases were found to be comprised of a core with three shells. The composition of the core and shells was determined using lattice constant measurements. Nanocomposites for photographic antist...
We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic (TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array method. Devices were grown using molecular beam epitaxy and fabricated using standard microfabrication processes. X-ray diffraction was used to measure the strain, and current–voltage (I–V) tests were performed to determin...
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