Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition

Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal m...

The healing of venous ulcers of the leg with and without gallium arsenide laser treatment was studied in 42 patients randomly divided into two groups. One group received standard conservative treatment and gallium arsenide laser, and the other received the same standard treatment and placebo laser treatment. There were no differences in results between the two groups.

We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with disimilar dependences on doping density and temperature. Our theoretical...

Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenid...

An enhanced valence force field model for zinc-blende crystals is developed to provide a unified description of the isothermal static and dynamical lattice properties of gallium arsenide. The expression for the lattice energy includes a second-nearest-neighbor coplanar interaction term, the Coulomb interaction between partially charged ions, and anharmonicity corrections. General relations are ...

Possible isomers of the gallium arsenide clusters of the formula Ga,,As, containing up to ten atoms and icosahedral clusters are enumerated. The possible parent polyhedrons up to ten vertices are constructed and then Pdlya’s theorem is applied to each polyhedron to calculate the generating functions for the enumeration of the isomers of gallium arsenide clusters of the formula Ga,,,As,. The dis...

Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conventional steps used in standard GaAs processing. The ohmic and Schottky contacts of Schottky diodes...