ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a...

We realize a fiber Bragg grating InGaN-based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of narrowband in near-UV, we can reach single-mode single-frequency regimes for self-injection locked diode. The device exhibits 44 dB side-mode suppression ratio mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth 16 kHz i...

Introduction: Nowadays, the main focus of dental studies is on adhesive dental materials; since clinical long-term success of bonded restorations depended more on marginal microleakage minimization. So, the aim of this study was Evaluation of Diode laser irradiation effect on microleakage in class V composite restoration before and after adhesive application. Materials and methods: In this in v...

We report the basic luminescence properties and the continuous-wave (CW) laser operation of a Pr(3+)-doped KYF(4) single crystal in the Red and Orange spectral regions by using a new pumping scheme. The pump source is an especially developed, compact, slightly tunable and intra-cavity frequency-doubled diode-pumped Nd:YAG laser delivering a CW output power up to about 1.4 W around 469.1 nm. At ...

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...

We report on the application of a novel all-solid-state violet laser diode source to confocal microscopy. The source has the potential to replace argon ion lasers in a range of fluorescence based imaging systems. Improvements in system performance and image quality through the use of anamorphic prisms to modify the beam profile have been characterised. These modifications have permitted high qu...