the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...

The switching device turn-on and turn-off process will produce high-frequency electromagnetic interference, based on the finite element method ANSYS software with powerful computing capabilities, has been widely used in complex electromagnetic field calculations. In this paper, ANSYS software to model and analyze the insulated gate bipolar transistor (IGBT) and quantitative distribution of elec...

ii These results indicate that short IED bipolar leads provide a signal that is adequate for clinical use. Furthermore, the performance of these leads was shown to be similar or even superior to that of the commonly used standard leads. It can be concluded that when correctly positioned, short IED bipolar leads are useful and can give additional value for clinical diagnostics. These results pro...

Article history: Received 25 May 2015 Received in revised form 19 June 2015 Accepted 20 June 2015 Available online xxxx

IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introdu...