Abstract A four-quadrant analog multiplier using a novel type of GaAs transistor is presented. This device, called 2-D MESFET, is dedicated to low power and high speed applications[1],[2]. A special architecture for the multiplier was designed by taking advantage of the dual-gate structure of the 2-D MESFET. The circuit relies on the square algebraic identity [8], with the squaring operation re...

The analysis of frequency-dependent characteristics of an ion-implanted buried-gate GaAs MESFET, with front side illumination has made achieving improved performance in I-V characteristics possible. When photo energy falls on the device, flow of charge carriers changes corresponding to the change in wave length and frequency of incident light. It has been observed that the channel conductance a...

Asynchronous design has been considered to avoid problems like high clock frequency generation and distribution, as well as high static power consumption in GaAs digital circuits. This paper discusses the real advantages of implementing such circuits with respect to feasibility, speed performance, power dissipation and ease of design migration from CMOS to GaAs while taking into account several...

This paper describes a new approach which allows the realization of both low-power and high storage capacity ROMs in GaAs. In this technique, called DDM (Divided Decoder Matrix), low-power operation is obtained by powering down the parts which are not situated in the addressing path, while high-storage capability is obtained by limiting the leakage currents in the ROM matrix. As an application ...

In this paper, an accurate modeling procedure for GaAs MESFET as active coupled transmission line is presented. This model can consider the effect of wave propagation along the device electrodes. In this modeling technique the active multiconductor transmission line (AMTL) equations are obtained, which satisfy the TEM wave propagation along the GaAs MESFET electrodes. This modeling procedure is...

A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 ...

In this paper, injection-locked MESFET oscillators are analyzed using several numerical models. The injectionlocking behavior of the van der Pol equation and of a more complex representation using the Curtice–Cubic MESFET model are investigated. Analysis and experimental results are compared for an NE71083 transistor oscillator operating at 0.5 GHz. The deficiencies of using a van der Pol oscil...