The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the ...

In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENATM process simulator and the device simulation is performed using ATLASTM from SILVACO i...

We propose a new lateral power metal-oxide semiconductor field-effect transistor (MOSFET) on InGaAs. The proposed structure is obtained by incorporating two trenches in the drift region of a standard power MOSFET structure. The modified device design provides reduction in electric field in the drift region leading to significant improvement in the device performance in terms of breakdown voltag...

A novel asymmetric MOSFET with no LDD on the source side is simulated on bulk-Si using a device simulator (SILVACO). In order to overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using mesa structure and sidewall spacer gate is proposed which provides self-alignment process, aggressive scaling, and uniformity. First of all, we have simulated to compare the ...

This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two gates, and field plate are introduced vertically on the sidewalls connected, respectively, to source. Technology computer-aided design (TCAD) simulator was used in process achieve specific on-resistance as low 0.79 mΩ.cm ...

Efficiency is a large concern in power electronics but size and weight must be taken into consideration as well. Power devices in need of thermal sinks for appropriate performance will affect both size and weight. MOSFET devices are the main components in the power electronics world because of their comparatively promising characteristics in power loss and switching performance. The objective o...

The steady miniaturization of the conventional MOSFET resulted in continuous improvement in integratedcircuit cost and functionality. Planar bulk MOSFET designs face many challenges as they are being scaled down. A segmentedchannel MOSFET (SegFET) device design combines the benefits of both planar bulk MOSFETs and thin-body transistor structures. The salient feature of this device is that the c...

A behavioral model in PSpice for a silicon carbide (SiC) power MOSFET rated at 1200V / 33A for a wide temperature range is developed by extracting the device parameters from the data sheet. The static and dynamic behavior of the SiC power MOSFET is simulated and compared with the device characteristics to validate the accuracy of the PSpice model. The temperature dependent behavior of the MOSFE...

In this paper, we apply our proposed computing algorithm for numerical solution of semiconductor device energy balance equation in carrier temperature simulation. This robust simulation based on finite volume discertization scheme and monotone iterative algorithm is successfully developed and implemented for intrinsic investigation of submicron MOSFET device. Simulation results demonstrate MOSF...