Gate voltage-dependent parasitic source and drain resistances in MOSFETs have been modeled and extracted with a symmetric additional resistance method (sARM) for better description of asymmetric parasitic resistances which are induced by intentional and/or accidental variations in the layout and fabrication process. A good agreement of nonlinear models with the sARM has been verified with exper...

New compounds are needed to treat parasitic nematode infections in humans, livestock and plants. Small molecule anthelmintics are the primary means of nematode parasite control in animals; however, widespread resistance to the currently available drug classes means control will be impossible without the introduction of new compounds. Adverse environmental effects associated with nematocides use...

AbstructA new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFET’s is presented, which is based on the well-known resistance method with performing a special technique to eliminate the uncertainty of the channel length as well as to reduce the influence of the parasitic source/drain resistance on threshold-voltage determination. l n particular, the metallur...

Ca(2+) channels regulate many crucial processes within cells and their abnormal activity can be damaging to cell survival, suggesting that they might represent attractive therapeutic targets in pathogenic organisms. Parasitic diseases such as malaria, leishmaniasis, trypanosomiasis and schistosomiasis are responsible for millions of deaths each year worldwide. The genomes of many pathogenic par...

The conventional MIMO systems have a capability of enhancing channel capacity by exploiting multipath environment [1]. Recently, a novel scheme which utilizes MIMO system in near-field region has proposed [2]. In the near-field MIMO system, channel capacity is able to be improved without a multipath, because spherical wave is considered as a superposition of plane waves. It is expected that the...

As an add-on device option for the ultra-low power CMOS technology, the double-gated vertical-channel Tunnel Field-Effect Transistors (TFETs) of different source configurations are comparatively studied from the perspectives of fabrication and current drivability. While the Top-Source design where the source of the device is placed on the top of the fin makes the fabrication and source engineer...

The noise assessment of Novel Transparent Gate Recessed Channel MOSFET has been investigated based on the simulated result from ATLAS device simulation. TCAD simulation results show TGRC-MOSFET divulges Conventional Recessed Channel (CRC)-MOSFET in terms of reduction in noise figure, cross correlation, noise conductance and parasitic capacitances. It also achieves higher optimum source impedanc...

this study seeks to examine how a company can select the best intermediary for its marketing channels with minimum of criteria and time. a theoretical framework is proposed based on the most important tasks of intermediary and the criteria to measure them. there are four basic tasks and thirty criteria in three independent levels. subsequently, an exploratory case study in iranian food industry...

Employment of the <100> channel direction in a strained-Si0.8Ge0.2 p-MOSFET provides a hole mobility enhancement as large as 25% and a parasitic resistance reduction of 20% compared to a <110> strained-Si0.8Ge0.2 channel p-MOSFET, which already has a better mobility and threshold voltage roll-off than the Si p-MOSFET. These results suggest that the <100> strained-SiGe-channel p-MOSFET can be us...