The silicon nitride passivated copper-metallized airbridges had been successfully integrated on the low noise PHEMT (Pseudomorphic High Electron Mobility Transistor) using WNx as the diffusion barrier between copper and the conventional gold based electrodes. 400 Å PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon nitride was used for copper airbridge passivation to avoid the copper oxi...

<span lang="EN-US">This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve desired lower sideband (LSB) signal and achieve satisfactory rejection unwanted signals (LO, USB IF). This SOM designed on PH15 process UMS f...

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided δ-doping at 6×1012 cm-2 and an AlAs/GaAs spacer. Such were used fabricate monolithic integrated circuits single-pole double throw switches with gate length width 0.5 μm 100 μm, respectively. resulting had following parameters: gm = 400 mS/mm, saturation current ID=380 ...

The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, the dynamic large-signal internal physical behavior of a pHEMT is examined using a quasi-two-dimensional physical device model. The model accounts ...

This work presents a process design kit (PDK) for 0.15 μm GaAs pHEMT low-noise MMIC applications developed AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, transistors. The PDK can be used in technology transfer or education.

In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT) high electron mobility transistor technologies. Starting with a modulator-driver MMIC for optical transmission systems, we describe state of the art MMICs like a 94 GHz low-noise amplifier, a 35 GHz and a 60 GHz medium power amplifier and finally we demonstrate the feasibility of a monolithicall...

This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolati...

The properties of HBTs, HEMTs, PHEMTs and MESFETs are reviewed and discussed in the context of their suitability for various applications. Noise, power and high frequency performance is reviewed and the physical mechanisms dictating their values are discussed. The reliability characteristics of the devices are discussed and system applications are reported.

In this paper, the design of efficient transmitting architectures is addressed. Taking advantage of the modeling and characterization of novel active devices as GaN HEMT and E-pHEMT, several topologies have been approached. An outphasing transmitter at 770 MHz have been implemented from two class-E RFPA designed over package GaN HEMTs. In addition, for multiband applications, a dual band outpha...