Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC device...

Etching of GaAs, when plasma of Ar gas is used and CF4 /O2 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ECR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/O2/Ar ratio and substrate bias on e...

Abstract The effect of HI and O2 plasma treatments on Ge surface is studied by X-ray photoelectron spectroscopy. oxide can be effectively removed at room temperature remote in inductively coupled reactive ion etching system without substrate bias. re-oxidation oxide-free plasma-treated has been performed sequentially plasma. By utilizing treatment cyclically, we have proved the viability digita...

Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...

Three-dimensional (3D) networks of carbon nanotubes (CNTs) were fabricated on a pillarpatterned substrate by plasma-enhanced chemical vapor deposition (PECVD). To fabricate 3D networks of CNTs, highly crystalline single-walled CNTs (SWCNTs) should be synthesize on the substrate. PECVD has advantages for low temperature growth and alignment of CNTs on the substrate, but it is difficult to synthe...

We report the effect of N2 addition to C4F8 and C4F8 /Ar discharges on plasma etching rates of organosilicate glass ~OSG! and etch stop layer materials (Si3N4 and SiC!, and the results of surface chemistry studies performed in parallel. N2 addition exhibits different effects in C4F8 and C4F8 /Ar plasmas, which may be explained by a higher plasma density, electron temperature, and possibly, the ...

Plasma process is a highly selective technique exploiting the individual or mixed function of positive ions, electrons, neutral radicals, and photons produced by low temperature plasmas. For example, dielectric etching is a competitive process among charging, etching and deposition at each of local positions of a geometrical structure exposed to reactive plasmas. Plasma etching is adjacent to t...

We present growth studies on gallium nitride (GaN) stripes with {101̄1} side facets grown on c-oriented GaN templates on sapphire. Via plasma enhanced chemical vapor deposition (PECVD), a 20 nm thick SiO2 mask is deposited on top of the templates. Afterwards, a polymethylmethacrylate (PMMA) based resist is patterned with stripes oriented along the GaN a-direction by electron beam (e-beam) lithog...