In this paper, we have developed a high power solid-state power amplifier (SSPA) for Sband military radars. The SSPA consists of a high power amplifier (HPA) module combined GaN based power amplifier pallets, a drive amplifier (DA) module, a digital control module and a power supply unit. The SSPA shows the total output power of 62 dBm in S-band.

a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 G...

Analysis and simulation are presented of the mismatched load condition for a balanced class-E power amplifier, which is based on 90° hybrids at its input and output. The performances of the 200-Watt balanced class-E amplifier, such as the output power and efficiency, were analyzed and compared to the conventional single-ended class-E power amplifier for the 1:3 VSWR mismatch condition. The simu...

In this paper, power amplifier operating with center frequency of 947.5 MHz, which can be used for the transmitter in beamforming systems, is proposed. The power amplifier implemented provides high power added efficiency (PAE) of 71.967% and low noise figure (NF) as low as 1.525. The linearity of the power amplifier is improved by using square law and cubic law analog predistortion techniques. ...

This paper describes the design and measured performance of a 1-8GHz power amplifier MMIC fabricated with a 0.15um Gallium Nitride (GaN) process technology. The process features a 100um thick Silicon Carbide (SiC) substrate and compact transistor layouts with individual source grounding vias (ISV). The design utilizes a non-uniform distributed power amplifier (NDPA) topology with a novel trifil...

A class E power amplifier including coupling coils is proposed for application in a wireless power transfer system using magnetic coupling. The proposed amplifier is directly connected to the coils with no discrete components for harmonic filtering and dc feeding, which could cause efficiency degradation of the amplifier. The system with the differential amplifier shows 6.95 W of transmitted po...

The main difference in topology of a boost bridgeamplifier and state-of-the-art class-D amplifier is in theconnection of a loudspeaker between a power supply and aswitching bridge. The boost bridge amplifier provides fourtimes higher peak power at the loudspeaker than the power,which can be achieved by a class-D amplifier from the samepower supply. Total harmonic distort...