نتایج جستجو برای: strained programming
تعداد نتایج: 334916 فیلتر نتایج به سال:
Overview of Strained Silicon Technology With its physical limitations already in sight, industry and academic microelectronics research has been focused on developing new technologies to extend Moore’s Law. One of these viable technologies is strained silicon. The attractiveness of strained-Si is that it increases carrier mobility, can be easily integrated into current manufacturing processes, ...
Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantummechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/str...
abstract: in this thesis, we focus to class of convex optimization problem whose objective function is given as a linear function and a convex function of a linear transformation of the decision variables and whose feasible region is a polytope. we show that there exists an optimal solution to this class of problems on a face of the constraint polytope of feasible region. based on this, we dev...
As complementary metal-oxide-semiconductor field-effect transistors (MOSFETs) scale, strained Si and SiGe technology have received more attention as a means of enhancing performance via improved carrier mobility. One of the biggest challenges for strained Si and SiGe technology is Si-Ge interdiffusion during thermal processing. Two different aspects of Si-Ge interdiffusion are explored in this ...
This thesis studied the application of strained-Si technology to RF power LDMOSFETs. Key issues for its implementation were determined to be thermal budget restrictions, gate oxide formation and impact ionization effects. 2D simulations were carried out to explore the design space of the strained-Si LDMOSFET. In order to address the thermal budget restrictions, use of a high-tilt implant for th...
Electro-thermal characteristics of strained-Si MOSFETs operating in high-current, high temperature regimes were investigated using device/circuit mixed mode simulations. The material parameters of strained-Si were calibrated for device simulations. Especially the phonon mean-free-path of strained-Si with high electric fields was estimated based on a full-band Monte Carlo device simulation. Desp...
Convexity theory and duality theory are important issues in math- ematical programming. Within the framework of credibility theory, this paper rst introduces the concept of convex fuzzy variables and some basic criteria. Furthermore, a convexity theorem for fuzzy chance constrained programming is proved by adding some convexity conditions on the objective and constraint functions. Finally,...
Single phase and strained LuMnO(3) thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1μ(B)), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic o...
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