This paper presents a comprehensive review of near-threshold wide-voltage designs on memory, resilient logic designs, low voltage Radio Frequency (RF) circuits, and timing analysis. With the prosperous development wearable applications, power consumption has become one primary challenges for IC designs. To improve efficiency, prefer scheme is to operate at an ultra Near Threshold Voltage (NTV)....

the experimental studies of methane conversion to higher hydrocarbons and methanol using a dielectric barrier discharge (dbd) reactor are presented in this article. the process is carried out at ambient atmospheric pressure and temperature. the dbd reactor is stimulated by an alternative voltage of 50 hz and amplitude of max.23kv. the examination of the effect of voltage and flow rates on metha...

In this research the influence of adding SiC on microstructure and electrical properties of ZnO-based Nanocomposite varistors were investigated. SiC was added with amounts of 10-0 mass% to ZnO-based varistor composition. It is found that SiC allows reaching to high threshold voltage with formation of fine-graine...

A proposed under-voltage lockout of compensated temperature coefficient threshold voltage without comparator is presented in this paper. The circuit achieves stability of threshold voltage without utilizing extra band gap reference voltage source and voltage comparator. In the temperature range of from -40°C to +125°C, variation of only 30mV of the threshold voltage occurs. The under-voltage lo...

Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal i...

The bias stress effect in pentacene organic thinfilm transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the timedependent threshold voltage shift to a stretched expo...

A new method for extracting the threshold voltage of MOSFETs is presented. The threshold voltage is the gate voltage at which the second difference of the logarithm of the drain current takes a minimum value. The method is applied to a 0.6-pm NMOSFET. The threshold voltage characteristics are compared with ones measured with previous methods and it is shown that the proposed method overcomes pr...

The driving force for the semiconductor industry growth has been the elegant scaling nature of CMOS technology. In future CMOS technology generations, supply and threshold voltages will have to continually scale to sustain performance increase, limit energy consumption, control power dissipation, and maintain reliability. These continual scaling requirements on supply and threshold voltages pos...

Local dC/dV spectroscopy performed in a scanning capacitance microscope ~SCM! was used to map, quantitatively and with high spatial resolution (;50 nm), lateral variations in the threshold voltage of an AlxGa12xN/GaN heterostructure field-effect transistor epitaxial layer structure. Scanning capacitance and the associated threshold voltage images show small round features less than 150 nm in di...

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness an...