A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron correlation induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott materia...

We developed a double-recess etching process and a new Digital-Oxide-Deposition (DOD) technique to fabricate 180nm low-threshold GaN Metal-OxideSemiconductor Double Heterostructure Field Effect Transistors (MOS-DHFET). Two device layer structures, InGaN channel design and InGaN back-barrier design, were employed to improve the confinement of TwoDimensional Electron Gas (2DEG) and mitigate the s...

Charge transfer and accumulation at semiconductor devices can lead to device degradation. Understanding and controlling such a process is therefore important. Second harmonic generation has been shown to be a sensitive probe of charging of semiconductor interfaces, with the added advantages of high spatial and temporal resolution. We have investigated the use of self assembled monolayers ~SAMs!...

-For many years VLSI Chip designers have been using Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). As the channel length of device is reducing, effects like parametric variations and increase in leakage current have caused V-I characteristics to deviate from those of traditional MOSFETs. Hence the development of devices at deep submicron retards to some extent. Carbon Nanotube Fi...

Abstract With the burgeoning developments in artificial intelligence, hardware implementation of neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and transistors) with voltage thresholds were recently proposed as suitable candidates. However, their development hindered by inherent integration issues inorganic ferroelectrics, well poor proper...

Hybrid superconductor-semiconductor heterostructures are promising platforms for realizing topological superconductors and exploring Majorana bound state physics. Motivated by recent experimental progress, we theoretically study how magnetic insulators offer an alternative to the use of external fields reaching regime. We consider different setups, where (1) insulator induces exchange field in ...

Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. Computational Electronics, as a part of the general Technology Computer Aided Design (TCAD) field, has become increasingly important as the cost of semiconductor manufacturing has grown exponentially, with a concurre...

Spintronics is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. Conventional electronics are based on the charge of the electron. Attempts to use the other fundamental property of an electron, its spin, have given rise to a new, rapidly evolving field, know...

A semiconductor processing method for the formation of self-aligned via and trench structures in III-V semiconductor devices in particular, on InP platform is presented, together with fabrication results. As a template for such self-aligned via and trench formations in a surrounding polymer layer on a semiconductor device, we make use of a sacrificial layer that consists of either a SiO2 dielec...