نتایج جستجو برای: multilayer beam
تعداد نتایج: 132128 فیلتر نتایج به سال:
X-ray based metrology techniques have demonstrated their capabilities for the measurement of critical process parameters on complex microelectronic thin film structures such as layer crystallinity or texture analysis (X-ray Diffraction, XRD), multilayer thickness (X-ray Reflectivity, XRR), material composition (X-ray Fluorescence, XRF) [1]. Achieving the X-ray beam spatial resolution and photon...
Background and Objectives: Primary Aromatic Amines (PAAs) are contaminants that can migrate from food flexible packaging. The main origin of these compounds is polyurethane adhesives used in the laminating process of multilayer films. Residual aromatic di-isocyanates of the reaction of adhesive polymerization migrate into the food, and are hydrolyzed to PAAs by the moisture of food. 2,4- and 2,...
Abstract We report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO) nanotubes using a multilayer graphene film as suspended substrate, the fabrication dual-wavelength photodetectors with hybrid configuration these materials. For nanostructures, ZnO InAs were grown vertically on top bottom surfaces films by metal-organic vapor-phase epitaxy molecular beam epitaxy, r...
100 ps time-resolved X-ray solution-scattering capabilities have been developed using multilayer optics at the beamline NW14A, Photon Factory Advanced Ring, KEK. X-ray pulses with an energy bandwidth of DeltaE/E = 1-5% are generated by reflecting X-ray pulses (DeltaE/E = 15%) through multilayer optics, made of W/B(4)C or depth-graded Ru/C on silicon substrate. This tailor-made wide-bandwidth X-...
Polarizing beam splitters that use the anisotropic spectral reflectivity (ASR) characteristic of high-spatialfrequency multilayer binary gratings have been designed, fabricated, and characterized. Using the ASR effect with rigorous coupled-wave analysis, we design an optical element that is transparent for TM polarization and reflective for TE polarization at an arbitrary incidence angle and op...
Lateral patterning of multilayer InAs/GaAs(001) quantum dot structures by in vacuo focused ion beam.
We report on the effects of patterning and layering on multilayer InAs/GaAs(001) quantum dot structures laterally ordered using an in vacuo focused ion beam. The patterned hole size and lateral pattern spacing affected the quantum dot size and the fidelity of the quantum dots with respect to the lateral patterns. 100% pattern fidelity was retained after six layers of dots for a 9.0 ms focused i...
background and aims. at present, cone beam computed tomography (cbct) has become a substitute for computed tomography (ct) in dental procedures. the metallic materials used in dentistry can produce artifacts due to the beam hardening phenomenon. these artifacts decrease the quality of images. in the present study, the number of artifacts as a result of beam hardening in the images of dental imp...
As indicated in the opening article of this issue [11 thin epitaxial films of some III-Y semiconductors have properties which are important in high-frequency and optoelectronic applications. Such films can be prepared by conventional growth techniques such as liquid-phase epitaxy (LPE) or vapour-phase epitaxy (YPE). For particular applications it may be advantageous to use metal-organic vapour-...
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