In this paper, we introduce an application-specific device modeling methodology to develop simple device model that accurately tracks the actual device I-V characteristics in relevant but bounded operating regions. We have specifically used a simple MOSFET model to precisely analyze the switching noises generated on a chip due to simultaneous driving of chip output pads by bulky buffer gates. P...

The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nan...

Application of double gate or surround-gate vertical metal oxide semiconductor field effect transistors (MOSFETs) is hindered by the parasitic overlap capacitance associated with their layout, which is considerably larger than for a lateral MOSFET on the same technology node. A simple self-aligned process has been developed to reduce the parasitic overlap capacitance in vertical MOSFETs using n...

The advantages of fully-depleted (FD) SOI CMOS technology in comparison to bulk Si regarding analogue circuit design have been reported in [1]. Most of them relate to the combination of the reduced capacitance of SOI technology with the better transconductance (gm) over drain current (IDS) ratio due to the reduced FD body factor, which provides enhanced bandwidth and gain, resulting in very sig...

Complementary MOSFET (CMOS) using high mobility materials using III-V and Ge channels are expected to be one of promising devices for high performance and low power advanced LSIs in the future under sub-10 nm regime, because of the enhanced carrier conduction properties. The advantages of MOSFETs using those materials can basically originate in the low effective mass, which leads to high inject...

The problem of parasitic residual deposition on the passivation layer in electroless deposition process is studied in this paper. The characterization analysis tools involved are focused ion beam (FIB), scanning electron microscopy (SEM), electron dispersive Xray (EDX) and metallurgical interface analysis. Samples were identified as either good or bad prior to the characterization process via a...

Splenic cysts are rare tumors, grouped into parasitic and non-parasitic cysts, no-parasitic further classified primary secondary depending on the mucous membrane of cyst, radiological imaging allows diagnosis to be made but confirmation is based an atom-o-pathological examination part. surgical treatment cornerstone symptomatic complicated splenic cysts. The conservative a reference for We repo...

We have developed a new label-free detection method where specific biomolecules adsorb to the walls of a suspended microchannel resonator, or simply flow through and thereby lower its resonant frequency. The oscillation of the microchannel is measured optically by reflecting a laser beam off the channel surface and detecting its position with a photo-sensitive detector. While the optical readou...

We compared Heterorhabditis bacteriophora GPS11 expressed sequence tags (ESTs) to the ESTs of animal-parasitic, human-parasitic, plant-parasitic, and free-living nematodes. We identified 127 previously nondescribed ESTs of which 119 had homologs in ESTs and 8 had homologs in proteins of free-living nematodes. These ESTs were assigned putative functions in transcription, signal transduction, cel...

Abstract This paper introduces a new parasitic-insensitive charge transfer circuit using active output voltage feedback. The proposed parasitic-insensitive charge transfer circuit uses a passive charge transfer circuit for maximum output voltage dynamic range. A feedback loop between the transfer and output nodes is formed using a unity-gain opamp to make the two nodes’ potentials same, which p...