It is forecasted that by 2003, a large number of applications will use CMOS technology for RF system-on-chip, such as remote control, radio modems, home system automation, etc. For example, in the home system automation, the concept is to replace the data cable between appliances by wireless link centered at 2.4GHz, with a range of approximately 8m. The reliability of the components used in the...

Keynote: The Future of Power Electronics and the Impending Challenges to Metrology Thomas Neyer Fellow, High-Voltage Device and Technology Development, Fairchild Semiconductor Power electronics has successfully established its foothold in most domestic, industrial and automotive applications like power supplies, household machines, air conditioners, power generation and transmission units, all ...

A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good cry...

In this paper two unified, scalable and transportable parallel approaches to the numerical simulation of semiconductor devices are presented: Concurrent Device Simulation (CDS), and Spatial Device Decomposition (SDD). Both approaches have been developed and tested on the Parsytec Supercluster Model 64 which is a medium size transputer system. A series of examples illustrate the application of t...

This paper reviews the basic circuit issues of silicon-on-insulator (SOI) technology for metal-oxide-semiconductor (CMOS) circuits. The superior features of SOI in low power, high speed, high device density and the effect of floating body particularly in partial depletion (PD) SOI device are addressed. Analog and RF circuits are considered and their performances are compared with those reported...

Silicon integrated circuit interconnect technology has evolved rapidly, driven by the continual increase in device functional density. This paper reviews past technology developments and highlights current innovations such as the use of copper metallisation and low k dielectrics to overcome device speed limitations. Areas of convergence between silicon and compound semiconductor interconnect te...

In semiconductor spintronics, electron spin rather than charge is the key property. This paper describes several spin-related devices using spin-orbit interaction. We have experimentally confirmed that the spin-orbit interaction in a semiconductor two-dimensional electron gas channel can be controlled by a gate voltage. This is the first step towards the creation of functional spin devices. The...

We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGc HBT using a hydrodynamic transport...

Device modeling of novel semiconductor devices requires adapted physical models which include quantum mechanical effects. The quantum hydrodynamic as well as the quantum drift diffusion model offers effective possibilities for the simulation of nanoscale devices, particularly if tunneling processes appear. The models can be implemented effectively in conventional device simulation systems.

The overall flow of the final test of integrated circuits can be represented by the job shop model with limited simultaneous multiple resources in which various product mixes, jobs recirculation, uncertain arrival of jobs, and unstable processing times complicate the problem. Rather than relying on domain experts, this study aims to develop a hybrid approach including a mathematical programming...