A new limit is presented on the axionlike monopole-dipole coupling in a range 10 − 1 cm. The gradient of spin-dependent nucleon-nucleon potential between He nucleus and nucleons of the walls of the cell containing He should affect the spin relaxation rate. The limit is obtained from existing data on the relaxation rate of spin-polarized He. PACS: 14.80.Mz; 12.20.Fv; 29.90.+r; 33.25.+k

The large spin dependence of the absorption cross section for neutrons by He gas provides a method to polarize neutron beams. For certain applications, such polarized He-based neutron ”spin filters” have advantages over conventional neutron optical polarizing methods. Spin filters operate at all neutron wavelengths, can cover a large angular range and/or a large energy range, and decouple neutr...

Growing technological challenges and soaring costs are gradually bringing the MOSFET scaling to an end. This intensifies the search of alternative technologies and computational principles. The electron spin attracts attention as a possible candidate to be used in future electron devices for complimenting or even replacing the charge degree of freedom employed in MOSFETs. The spin state is char...

Silicon is an ideal material for spintronic applications due to its weak spin-orbit interaction and long spin lifetime [1,2]. Spin injection from a ferromagnetic electrode into n-type silicon was claimed at room [3] and elevated [4] temperatures. However, the amplitude of the spin-accumulation signal extracted from a three-terminal injection method [2,3] is orders of magnitude higher than predi...

Spin filtering at organic-metal interfaces is often determined by the details of the interaction between the organic molecules and the inorganic magnets used as electrodes. Here we demonstrate a spin-filtering mechanism based on the dynamical spin relaxation of the long-living interface states formed by the magnet and weakly physisorbed molecules. We investigate the case of Alq3 on Co and, by c...

We report an experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function for semiconductors connected with a ferromagnet, a pure spin current is generated in the n-Ge at room temperature. The pure spin current is detected by using the in...