A novel voltage reference has been proposed and simulated using a 0.18μm CMOS process in this paper. A near-zero temperature coefficient voltage is achieved in virtue of the bias voltage subcirciut which consists of two MOSFETs operating in the saturation region. The kind of bias voltage subcirciut is used to adjust the output voltage and compensate the curvature. The output voltage is equal to...

Sharp wave ripples (high frequency events which occur in the CA1 hippocampal region of the brain) are detected using algorithms which automatically threshold the data at certain voltage values. Typically, detection algorithms use the same threshold throughout the entire voltage trace. The problem with this method is that the amplitude distribution of the noise is not constant in time; algorithm...

Dynamic voltage scaling (DVS) has become a standard approach for reducing power when performance requirements vary. Voltage dithering was proposed to provide near-optimum DVS power savings with much less overhead [1]. Voltage dithering refers to operating for different fractions of time at two discrete voltage and frequency pairs to achieve an intermediate average frequency. Previous implementa...

The electrostatic force required for the driving of liquid droplet injected in a microchannel was studied to obtain the guiding principle to reduce the driving voltage of waveguide optical switch based on the movement of droplet. We analytically calculated the relation between the threshold voltage and velocity of droplet and the surface roughness of microchannel, and clarified some unconfirmed...

We reexamine degradation and recovery dynamics in the negative bias temperature instability (NBTI) of p-channel metal oxide semiconductor field effect transistors (PMOSFETs) by making use of the recently developed in situ polyheater technique. The capability of switching the device temperature extremely fast and almost arbitrarily allows for measuring differently stressed devices directly after...

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives pr...

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current due to influences of processes variations becomes a serious problem. Random dopant fluctuation is one of the problems. In this work, we numerically examine the fluctuation effects of r...

The growing demand for energy constrained applications and portable devices have created a dire need for ultra-low power circuits. Implantable biomedical devices such as pacemakers need ultra-low power circuits for a better battery life for uninterrupted biomedical data processing. Circuits operating in subthreshold region minimize the energy per operation, thus providing a better platform for ...

Digital circuits operating in the sub-threshold regime are able to perform minimum energy operation at a given delay. In the sub-threshold regime the circuit delay, and hence, the leakage energy consumption depend on the supply voltage exponentially. By reducing the idle time of the circuit, the energy-minimum supply voltage can be reduced, resulting in lower energy consumption. This paper firs...

Lowering supply voltage of FinFET circuits is an effective way to achieve low power dissipations. In this paper, the super-threshold adiabatic FinFET circuits based on PAL-2N operating on medium strong inversion regions are addressed in terms of energy consumption and operating frequency. The supply voltage of the super-threshold circuits is much larger than the threshold voltage of the transis...