This paper presents a transistor sizing methodology for analog CMOS circuits that combines the physics-based gm/ID characteristics provided by the ACM compact model and the simulated annealing technique for the circuit optimization. The methodology exploits different transistor widths and lengths and provides good solutions in a reasonable CPU time, with a single technologydependent curve and a...

The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all necessary equations are detailed and coupled. This proposed by finite element method using Comsol multiphysics software, allowed to behaviour transistor observe different degradations in structure component. Then, an optimization is avoid failures transistor. In this work, we have...

1 This work was partly supported by a grant from the Engineering and Physical Sciences Research Council (United Kingdom) and Advanced Power Components (Rochester, United Kingdom). Abstract The use of behavioural modelling for operational amplifiers has been well known for many years and previous work has included modelling of specific fault conditions using a macro-model. In this paper, the mod...

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less wellknown model parameters. A variety of electrical outputs from the model are compared to experiment, and t...

Among the most important components in complex and high-power mechatronic systems is transistor. The High Electron Mobility Transistor (HEMT) a technology under development. This paper presents hybrid Reliability Based Design Optimization (RBDO) method applied to HEMT order improve its performance reliability. execution of RBDO processes requires development coupling two models: finite element ...

This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and...

Neuromorphic analog metal-oxide-silicon (MOS) transistor circuits promise compact, low-power, and high-speed emulations of iono-neuronal dynamics orders-of-magnitude faster than digital simulation. However, their inherently limited input voltage dynamic range vs power consumption and silicon die area tradeoffs makes them highly sensitive to transistor mismatch due to fabrication inaccuracy, dev...