نتایج جستجو برای: electron mobility

تعداد نتایج: 370724  

Owing amongst other to its high electron mobility, fullerene C70, has been widely used as an electron transporting layer in organic solar cells. In this research, we report the use of C70 thin films as electron transport layers of planar perovskite solar cells (PSCs) using a conventional device structure. The thickness of the C70 layer has been optimized to achieve the best efficiency of 12%. I...

Journal: :Physical chemistry chemical physics : PCCP 2013
Lijuan Wang Bin Xu Jibo Zhang Yujie Dong Shanpeng Wen Houyu Zhang Wenjing Tian

The electronic structure and charge transport property of 9,10-distyrylanthracene (DSA) and its derivatives with high solid-state luminescent efficiency were investigated by using density functional theory (DFT). The impact of substituents on the optimized structure, reorganization energy, ionization potential (IP) and electronic affinity (EA), frontier orbitals, crystal packing, transfer integ...

2003
F. Gámiz J. B. Roldán A. Godoy J. E. Carceller

We have studied electron mobility behavior in asymmetric double-gate silicon on insulator ~DGSOI! inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible for the enhancement of the electron mobility. Poisson’s and Schroedinger’s equations have been s...

2014

Computer software to calculate electron mobility with respect to different scattering mechanism has been developed. This software is adopted completely Graphical User Interface (GUI) technique and its interface has been designed by Microsoft Visual basic 6.0. As a case study the electron mobility of n-GaN was performed using this software. The behavior of the mobility for nGaN due to elastic sc...

2012
Fahrettin Sarcan Omer Donmez Mustafa Gunes Ayse Erol Mehmet Cetin Arikan Janne Puustinen Mircea Guina

In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga0.68In0.32NyAs1 - y/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effect measurements have been performed between 10 and 300 K. Drastic decrease is observed in the electron mo...

2004
Hsin-Fei Meng Yi-Shiou Chen

Electron-hole symmetry in conjugated polymers is found to exist in not only the band structure but also the defect levels caused by structure disorder. The commonly observed higher hole mobility is explained by (1) the compensation of the hole traps by the unintentional background p doping; and (2) the electron traps caused by oxidation. Higher electron mobility in N and O containing conjugated...

2014
Carol Emig

Closing educational achievement gaps is central to improving social mobility and increasing opportunity. As such, the education field continues to test a variety of approaches to promoting academic success, especially for disadvantaged students. Integrated student supports (ISS) is one promising approach taking hold in communities across the country, often in tandem with education reforms that ...

2006
Justin W. Koo Iain D. Boyd

Accurate modeling of the anomalous electron mobility is absolutely critical for successful simulation of Hall thrusters. In this work, existing computational models for the anomalous electron mobility are used to simulate the UM/AFRL P5 Hall thruster a 5 kW laboratory model in a two-dimensional axisymmetric hybrid particle-in-cell Monte Carlo collision code. Comparison to experimental results i...

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