p { margin-bottom: 0.1in; direction: rtl; line-height: 120%; text-align: right; }a:link { color: rgb(0, 0, 255); } In this paper, the reported experimental data related to electrical transport properties in bulk ZnO, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitavely and the most important scattering parameters on controlling electron concentratio...

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

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Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Role of oxy...