نتایج جستجو برای: etching time
تعداد نتایج: 1900968 فیلتر نتایج به سال:
in this experimental work, by using the method of plasma-chemical etching, we have dealtwith the causes of the creation of a distorted layer on the surface of silicon wafers during mechanicalmachining processes, in addition, the elucidation of connections between the structure of this layer andcharacteristic parameters of the mechanical strength of these wafers have been studied. experimentalre...
OBJECTIVES Hydrofluoric (HF) acid etching increases the bond strength between composite resin and porcelain surfaces and has been advocated as a pre-cementation technique for ceramic restorations. The internal surface flaw distribution which is implicated in the premature failure of ceramic restorations is modified by the etching process and little agreement exists amongst researchers as to the...
objectives: this study aimed to assess the effect of re-etching of desensitized dentin for five and 10 seconds on marginal microleakage of composite restorations. materials and methods: class v cavities (4x2x2mm) were prepared on the buccal surfaces of 64 third molars and randomly divided into four groups of 16. in the control group, single bond (sb) adhesive was applied after etching. in bb+sb...
In the present work, anodized aluminum oxide template was prepared by accelerated mild anodization technique in 0.6M phosphoric aside and 175 V, anodization voltage. Pore widening was performed by chemical etching in 0.5M phosphoric acid for 8, 16, 32, 40 minutes. Scanning Electron Microscopy (SEM) images showed the pores, diameter exponentially increases with etching time. By depositing silver...
We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabricat...
Reflection spectra of four porous silicon samples under etching times of 2, 6, 10, and 14 min with current density of 10 mA/cm2 were measured. Reflection spectra behaviors for all samples were the same, but their intensities were different and decreased by increasing the etching time. The similar behavior of reflection spectra could be attributed to the electrolyte solution concentration which ...
Abstract Background and aim: Over the years, improvments have been done to simplify clinical bonding procedure. One of these material is Transbond™ Plus Self Etching. The aim of this study was to evaluate the effect of saliva contamination and reusing Transbond™ Plus Self Etching Primer (SEP) on shear bond strength of orthodontic brackets. Materials and Methods: Fifty premolars divided into fiv...
We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion flu...
Time-resolved extinction spectroscopy is employed to study the reaction kinetics in the shape-conversion reaction involving halide ions (including Cl(-), Br(-) and I(-)) etching (sculpturing) silver nanoplates. A series of time-resolved extinction spectra are obtained during the in situ etching process and the evolution of surface plasmon resonance (SPR) of the silver nanoparticles is analyzed....
The aim of this study was to examine the effect of different acid etching times on the surface roughness and flexural strength of a lithium disilicate-based glass ceramic. Ceramic bar-shaped specimens (16 mm x 2 mm x 2 mm) were produced from ceramic blocks. All specimens were polished and sonically cleaned in distilled water. Specimens were randomly divided into 5 groups (n=15). Group A (contro...
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